ATmega645P Atmel Corporation, ATmega645P Datasheet - Page 273
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ATmega645P
Manufacturer Part Number
ATmega645P
Description
Manufacturer
Atmel Corporation
Specifications of ATmega645P
Flash (kbytes)
64 Kbytes
Pin Count
64
Max. Operating Frequency
16 MHz
Cpu
8-bit AVR
# Of Touch Channels
16
Hardware Qtouch Acquisition
No
Max I/o Pins
54
Ext Interrupts
17
Usb Speed
No
Usb Interface
No
Spi
2
Twi (i2c)
1
Uart
1
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
8
Adc Resolution (bits)
10
Adc Speed (ksps)
15
Analog Comparators
1
Resistive Touch Screen
No
Temp. Sensor
No
Crypto Engine
No
Sram (kbytes)
4
Eeprom (bytes)
2048
Self Program Memory
YES
Dram Memory
No
Nand Interface
No
Picopower
Yes
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.8 to 5.5
Operating Voltage (vcc)
1.8 to 5.5
Fpu
No
Mpu / Mmu
no / no
Timers
3
Output Compare Channels
4
Input Capture Channels
1
Pwm Channels
4
32khz Rtc
Yes
Calibrated Rc Oscillator
Yes
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26.8
26.8.1
26.8.2
8285D–AVR–06/11
Self-Programming the Flash
Performing Page Erase by SPM
Filling the Temporary Buffer (Page Loading)
ATmega165A/PA/325A/PA/3250A/PA/645A/P/6450A/P
The program memory is updated in a page by page fashion. Before programming a page with
the data stored in the temporary page buffer, the page must be erased. The temporary page buf-
fer is filled one word at a time using SPM and the buffer can be filled either before the Page
Erase command or between a Page Erase and a Page Write operation:
Alternative 1, fill the buffer before a Page Erase
• Fill temporary page buffer
• Perform a Page Erase
• Perform a Page Write
Alternative 2, fill the buffer after Page Erase
• Perform a Page Erase
• Fill temporary page buffer
• Perform a Page Write
If only a part of the page needs to be changed, the rest of the page must be stored (for example
in the temporary page buffer) before the erase, and then be rewritten. When using alternative 1,
the Boot Loader provides an effective Read-Modify-Write feature which allows the user software
to first read the page, do the necessary changes, and then write back the modified data. If alter-
native 2 is used, it is not possible to read the old data while loading since the page is already
erased. The temporary page buffer can be accessed in a random sequence. It is essential that
the page address used in both the Page Erase and Page Write operation is addressing the same
page. See
example.
To execute Page Erase, set up the address in the Z-pointer, write “X0000011” to SPMCSR and
execute SPM within four clock cycles after writing SPMCSR.
The page address must be written to PCPAGE in the Z-register. Other bits in the Z-pointer will
be ignored during this operation.
• Page Erase to the RWW section: The NRWW section can be read during the Page Erase.
• Page Erase to the NRWW section: The CPU is halted during the operation.
Note:
To write an instruction word, set up the address in the Z-pointer and data in R1:R0, write
“00000001” to SPMCSR and execute SPM within four clock cycles after writing SPMCSR. The
content of PCWORD in the Z-register is used to address the data in the temporary buffer. The
temporary buffer will auto-erase after a Page Write operation or by writing the RWWSRE bit in
SPMCSR. It is also erased after a system reset. Note that it is not possible to write more than
one time to each address without erasing the temporary buffer.
If the EEPROM is written in the middle of an SPM Page Load operation, all data loaded will be
lost.
1. If an interrupt occurs in the timed sequence the four cycle access cannot be guaranteed. In
”Boot Loader: Simple Assembly Code Example” on page 277
order to ensure atomic operation you must disable interrupts before writing to SPMCSR.
(1)
The data in R1 and R0 is ignored.
for an assembly code
273
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