ATmega645P Atmel Corporation, ATmega645P Datasheet - Page 289
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ATmega645P
Manufacturer Part Number
ATmega645P
Description
Manufacturer
Atmel Corporation
Specifications of ATmega645P
Flash (kbytes)
64 Kbytes
Pin Count
64
Max. Operating Frequency
16 MHz
Cpu
8-bit AVR
# Of Touch Channels
16
Hardware Qtouch Acquisition
No
Max I/o Pins
54
Ext Interrupts
17
Usb Speed
No
Usb Interface
No
Spi
2
Twi (i2c)
1
Uart
1
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
8
Adc Resolution (bits)
10
Adc Speed (ksps)
15
Analog Comparators
1
Resistive Touch Screen
No
Temp. Sensor
No
Crypto Engine
No
Sram (kbytes)
4
Eeprom (bytes)
2048
Self Program Memory
YES
Dram Memory
No
Nand Interface
No
Picopower
Yes
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.8 to 5.5
Operating Voltage (vcc)
1.8 to 5.5
Fpu
No
Mpu / Mmu
no / no
Timers
3
Output Compare Channels
4
Input Capture Channels
1
Pwm Channels
4
32khz Rtc
Yes
Calibrated Rc Oscillator
Yes
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27.7
27.7.1
27.7.2
27.7.3
27.7.4
8285D–AVR–06/11
Parallel Programming
Enter Programming Mode
Considerations for Efficient Programming
Chip Erase
Programming the Flash
ATmega165A/PA/325A/PA/3250A/PA/645A/P/6450A/P
The following algorithm puts the device in parallel programming mode:
1. Apply 4.5 - 5.5V between V
2. Set RESET to “0” and toggle XTAL1 at least six times.
3. Set the Prog_enable pins listed in
4. Apply 11.5 - 12.5V to RESET. Any activity on Prog_enable pins within 100 ns after +12V
5. Wait at least 50 µs before sending a new command.
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
• The command needs only be loaded once when writing or reading multiple memory locations.
• Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the
• Address high byte needs only be loaded before programming or reading a new 256 word
The Chip Erase will erase the Flash and EEPROM
not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are
reprogrammed.
Note:
Load Command “Chip Erase”
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “1000 0000”. This is the command for Chip Erase.
4. Give XTAL1 a positive pulse. This loads the command.
5. Give WR a negative pulse. This starts the Chip Erase. RDY/BSY goes low.
6. Wait until RDY/BSY goes high before loading a new command.
The Flash is organized in pages, see
the program data is latched into a page buffer. This allows one page of program data to be pro-
grammed simultaneously. The following procedure describes how to program the entire Flash
memory:
EESAVE Fuse is programmed) and Flash after a Chip Erase.
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
100 ns.
has been applied to RESET, will cause the device to fail entering programming mode.
1. The EEPRPOM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
CC
and GND.
Table 27-10 on page 288
Table 27-7 on page
(1)
memories plus Lock bits. The Lock bits are
286. When programming the Flash,
to “0000” and wait at least
289
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