SAM7L128 Atmel Corporation, SAM7L128 Datasheet - Page 169
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SAM7L128
Manufacturer Part Number
SAM7L128
Description
Manufacturer
Atmel Corporation
Specifications of SAM7L128
Flash (kbytes)
128 Kbytes
Pin Count
144
Max. Operating Frequency
36 MHz
Cpu
ARM7TDMI
Hardware Qtouch Acquisition
No
Max I/o Pins
80
Ext Interrupts
80
Usb Speed
No
Usb Interface
No
Spi
1
Twi (i2c)
1
Uart
3
Segment Lcd
40
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
4
Adc Resolution (bits)
10
Adc Speed (ksps)
460
Resistive Touch Screen
No
Temp. Sensor
No
Crypto Engine
No
Sram (kbytes)
6
Self Program Memory
YES
Dram Memory
No
Nand Interface
No
Picopower
No
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.8/3.3
Operating Voltage (vcc)
1.8 to 3.6
Fpu
No
Mpu / Mmu
no / no
Timers
3
Output Compare Channels
3
Input Capture Channels
3
Pwm Channels
4
32khz Rtc
Yes
Calibrated Rc Oscillator
No
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20.3.4
20.3.4.1
20.3.4.2
6257A–ATARM–20-Feb-08
Device Operations
Flash Read Command
Flash Write Command
The write handshake is done by polling the Debug Comms Control Register until the R bit is
cleared. Once cleared, data can be written to the Debug Comms Data Register.
The read handshake is done by polling the Debug Comms Control Register until the W bit is set.
Once set, data can be read in the Debug Comms Data Register.
Several commands on the Flash memory are available. These commands are summarized in
Table 20-3 on page
is reading and writing the Debug Comms Registers.
This command is used to read the Flash contents. The memory map is accessible through this
command. Memory is seen as an array of words (32-bit wide). The read command can start at
any valid address in the memory plane. This address must be word-aligned. The address is
automatically incremented.
Table 20-18. Read Command
This command is used to write the Flash contents. The address transmitted must be a valid
Flash address in the memory plane.
The Flash memory plane is organized into several pages. Data to be written is stored in a load
buffer that corresponds to a Flash memory page. The load buffer is automatically flushed to the
Flash:
The Write Page command (WP) is optimized for consecutive writes. Write handshaking can be
chained; an internal address buffer is automatically increased.
Table 20-19. Write Command
Read/Write
Write
Write
Read
Read
...
Read
Read/Write
Write
Write
Write
• before access to any page than the current one
• at the end of the number of words transmitted
– Bit 0 (R): Denotes whether the programmer can send data from the Debug Comms
Data Register. If R = 1, data previously placed there through the scan chain has not
been collected by the device and so the programmer must wait.
159. Commands are run by the programmer through the serial interface that
DR Data
(Number of Words to Read) << 16 | READ
Address
Memory [address]
Memory [address+4]
...
Memory [address+(Number of Words to Read - 1)* 4]
DR Data
(Number of Words to Write) << 16 | (WP or WPL or EWP or EWPL)
Address
Memory [address]
AT91SAM7L128/64 Preliminary
169
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