kfm2g16q2m-deb8 Samsung Semiconductor, Inc., kfm2g16q2m-deb8 Datasheet - Page 119

• Manufacturer Part Number: kfm2g16q2m-deb8
• Description: 2gb Muxonenand M-die
• Manufacturer: Samsung Semiconductor, Inc.

3.13
MuxOneNAND2G(KFM2G16Q2M-DEBx)
MuxOneNAND4G(KFN4G16Q2M-DEBx)
MuxOneNAND8G(KFK8G16Q2M-DEBx)
There are multiple methods for erasing data in the device including Block Erase and Multi-Block Erase.
3.13.1 Block Erase Operation
The Block Erase Operation is done on a block basis. To erase a block is to write all 1's into the desired memory block by executing
the Internal Erase Routine. All previous data is lost.
Block Erase Operation Flow Chart
Note 1) ’Write 0 to interrupt register’ step may be ignored when using INT auto mode. Refer to chapter 2.8.18.1
Erase Operation
See Timing Diagram 6.16
* DBS, DFS is for DDP
Write 0 to interrupt register
Add: F100h DQ=DFS*, FBA
Write ’DFS*, FBA’ of Flash
Add: F240h DQ[10]=Error
Add: F241h DQ=[15]=INT
Select DataRAM for DDP
Write ’Erase’ Command
Add: F241h DQ=0000h
Add: F220h DQ=0094h
Add: F101h DQ=DBS*
low to high transition
Wait for INT register
Erase completed
Read Controller
Status Register
DQ[10]=0?
Start
YES
1)
*
119
: If erase operation results in an error, map out
the failing block and replace it with another block.
Erase Error
NO
FLASH MEMORY