kfm2g16q2m-deb8 Samsung Semiconductor, Inc., kfm2g16q2m-deb8 Datasheet - Page 68

• Manufacturer Part Number: kfm2g16q2m-deb8
• Description: 2gb Muxonenand M-die
• Manufacturer: Samsung Semiconductor, Inc.

Burst Length (BL) Information[11:9]
MuxOneNAND2G(KFM2G16Q2M-DEBx)
MuxOneNAND4G(KFN4G16Q2M-DEBx)
MuxOneNAND8G(KFK8G16Q2M-DEBx)
Burst Length (BL)
Hosts must follow burst length set by BL when reading data in synchronous burst read.
Note 1) For normal synchronous burst read, setting BL=000 (continuous) will read 1K words, depending on the number of clocks. In
using Synchronous Burst Block Read,
setting BL=000 (continuous) will read the amount of data in a block set by number of page register.
Note 2) Even in using Synchronous Burst Block Read, it is possible to use above burst length by setting BL register by following the
above table.
Error Correction Code (ECC) Information[8]
RDY Polarity (RDYpol) Information[7]
INT Polarity (INTpol) Information[6]
Item
BL
1 (default)
110~111
RDYpol
INTpol
ECC
Item
Item
000
001
010
100
101
011
BL
0
Burst Length
Definition
INT bit of Interrupt Status Register
Error Correction Code Operation
1K words (Block Read Only)
Burst Length(Main)
RDY signal polarity
Definition
Definition
32 words
1 (ready)
1 (ready)
0 (busy)
0 (busy)
68
linear burst read and wrap around. And also burst length during
Specifies the size of the burst length during a synchronous
Continuous(default)
Reserved
16 words
a synchronous linear burst write
4 words
8 words
1 = without correction (bypassed)
Description
0 = with correction (default)
1 = high for ready (default)
FLASH MEMORY
Burst Length(Spare)
0 = low for ready
INT Pin output
Description
Description
High
High
Low
Low
N/A
N/A