kfm2g16q2m-deb8 Samsung Semiconductor, Inc., kfm2g16q2m-deb8 Datasheet - Page 61

• Manufacturer Part Number: kfm2g16q2m-deb8
• Description: 2gb Muxonenand M-die
• Manufacturer: Samsung Semiconductor, Inc.

2.8.9
MuxOneNAND2G(KFM2G16Q2M-DEBx)
MuxOneNAND4G(KFN4G16Q2M-DEBx)
MuxOneNAND8G(KFK8G16Q2M-DEBx)
This Read/Write register describes the NAND Flash block address which will be loaded, programmed, or erased.
F100h, default = 0000h
Note 1) Bit 0 should be fixed ’low’ at 2X Program and 2X Cache Program.
Start Address1 Information
2.8.10 Start Address2 Register F101h (R/W)
This Read/Write register describes the BufferRAM of DDP (Device BufferRAM Select)
F101h, default = 0000h
Start Address2 Information
In the case of writing Register, both registers in chip1 and chip2 will be written regardless of DBS. Reading out from Register of chip1/
chip2 follows the DBS setting.
In using DDP chip, BootRAM of Chip 1 will always be selected regardless of DBS.
Reading and Writing on the DataRAM of DDP chip is different. Only the DataRAM selected by DBS will be written and read out.
DBS
DFS
15
15
Register Information
Register Information
14
14
Start Address1 Register F100h (R/W)
FBA
DFS
DBS
Reserved(0000)
4Gb DDP
Device
13
13
2Gb
12
12
CE
11
11
10
10
DBS
DBS
DFS
DFS
CE
CE
9
9
BufferRAM and Register of DDP (Device BufferRAM Select)
Reserved(000000000000000)
DDP_OPT
GND
V
DDP_OPT
DD
Number of Block
Comp
Comp
Comp
Comp
Flash Core of DDP (Device Flash Core Select)
8
8
CHIP 1
CHIP 2
2048
4096
61
7
7
NAND Flash Block Address
BUFFER
BUFFER
FLASH
FLASH
SRAM
CORE
SRAM
CORE
6
6
Description
Description
INT
INT
FBA
5
5
1)
*Comp = Comparator
INT
4
4
FLASH MEMORY
DFS[15] & FBA[10:0]
3
3
FBA[10:0]
FBA
2
2
1
1
0
0