kfm2g16q2m-deb8 Samsung Semiconductor, Inc., kfm2g16q2m-deb8 Datasheet - Page 167

• Manufacturer Part Number: kfm2g16q2m-deb8
• Description: 2gb Muxonenand M-die
• Manufacturer: Samsung Semiconductor, Inc.

6.23
MuxOneNAND2G(KFM2G16Q2M-DEBx)
MuxOneNAND4G(KFN4G16Q2M-DEBx)
MuxOneNAND8G(KFK8G16Q2M-DEBx)
6.22
A/DQ15
A/DQ15
A/DQ0:
A/DQ0:
RDY
RDY
AVD
AVD
NOTE:
1. VA=Valid Read Address, RD=Read Data.
2. Before IOBE is set to 1, RDY and INT pin are High-Z state.
3. Refer to chapter 5.5 for tASO description and value.
NOTE:
1. VA=Valid Read Address, RD=Read Data.
2. Before IOBE is set to 1, RDY and INT pin are High-Z state.
3. Refer to chapter 5.5 for tASO description and value.
WE
WE
OE
OE
CE
CE
2)
2)
Hi-Z
t
t
t
Toggle Bit Timing in Asynchronous Read
(VA Transition After AVD Low)
AAVDS
Toggle Bit Timing in Asynchronous Read
(VA Transition Before AVD Low)
CER
AAVDS
t
t
CER
t
AVDO
CA
See AC Characteristics Table 5.5
See AC Characteristics Table 5.5
t
ASO
VA
t
CA
1)
t
t
ASO
AA
t
VA
t
AVDP
CE
t
t
1)
t
ACC
OE
AVDP
t
AAVDH
t
t
AVDO
OE
t
AAVDH
t
RC
t
t
CE
RC
Status RD
Status RD
1)
1)
t
OEZ
t
CEZ
t
OEZ
167
t
CEZ
Hi-Z
t
CA
Hi-Z
VA
VA
Status RD
FLASH MEMORY
Status RD
Hi-Z
Hi-Z
Hi-Z