kfm2g16q2m-deb8 Samsung Semiconductor, Inc., kfm2g16q2m-deb8 Datasheet - Page 144

• Manufacturer Part Number: kfm2g16q2m-deb8
• Description: 2gb Muxonenand M-die
• Manufacturer: Samsung Semiconductor, Inc.

5.0
5.1
MuxOneNAND2G(KFM2G16Q2M-DEBx)
MuxOneNAND4G(KFN4G16Q2M-DEBx)
MuxOneNAND8G(KFK8G16Q2M-DEBx)
5.2
CAPACITANCE
NOTE : Capacitance is periodically sampled and not 100% tested.
5.3
NOTES:
1. The
2. The 1st block, which is placed on 00h block address, is fully guaranteed to be a valid block.
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load
sented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits
factory-marked bad blocks.
Input Capacitance
Control Pin Capacitance
Output Capacitance
INT Capacitance
Valid Block Number
V
0V
CC
device
V
Item
CC
may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is pre-
/2
AC CHARACTERISTICS
AC Test Conditions
Valid Block Characteristics
Device Capacitance
Parameter
Input Pulse and Test Point
(T
A
Input & Output
= 25 °C, V
Test Point
Parameter
Symbol
C
C
C
C
OUT
IN1
IN2
INT
Single
DDP
QDP
CLK
other inputs
CC
= 1.8V, f = 1.0MHz)
Test Condition
V
V
V
V
OUT
OUT
IN
IN
Symbol
V
=0V
=0V
=0V
=0V
N
CC
VB
/2
Min
144
-
-
-
-
Single
2008
4016
8032
Min
Device
Under
Max
Test
10
10
10
10
Value (66MHz)
C
0V to V
L
V
Min
Output Load
Typ.
3ns
5ns
= 30pF
CC
-
-
-
-
-
-
-
/2
DDP
CC
* C
L
Max
= 30pF including scope
20
20
20
20
and Jig capacitance
FLASH MEMORY
2048
4096
8192
Max
Min
-
-
-
-
QDP
.
Value (83MHz)
Do not erase or program
C
0V to V
Max
L
40
40
40
40
V
= 30pF
2ns
2ns
CC
/2
Blocks
Blocks
Blocks
CC
Unit
Unit
pF
pF
pF
pF