kfm2g16q2m-deb8 Samsung Semiconductor, Inc., kfm2g16q2m-deb8 Datasheet - Page 65

• Manufacturer Part Number: kfm2g16q2m-deb8
• Description: 2gb Muxonenand M-die
• Manufacturer: Samsung Semiconductor, Inc.

NOTE:
1) 0080h programs both main and spare area, while 001Ah programs only spare area. Refer to chapter 5.9 for NOP limits in issuing these commands.
When using 0080h and 001Ah command, Read-only part in spare area must be masked by FF. (Refer to chapter 2.7.2)
2) ’2X Program’ is executed by ’007D’. This command can be used alone and used for ending ’2X Cache Program’.
3) ’Reset MuxOneNAND’(=Hot reset) command makes the registers and NAND Flash core into default state.
2.8.18 Command Register F220h (R/W)
MuxOneNAND2G(KFM2G16Q2M-DEBx)
MuxOneNAND4G(KFN4G16Q2M-DEBx)
MuxOneNAND8G(KFK8G16Q2M-DEBx)
Command can be issued by two following methods, and user may select one way or the other to issue appropriate command;
1. Write command into Command Register when INT is at ready state. INT will automatically turn to busy state as command is issued.
Once the desired operation is completed, INT will go back ready state.
2. Write 0000h to INT bit of Interrupt Status Register, and then write command into Command Register. Once the desired operation is
completed, INT will go back to ready state.
(00F0h and 00F3h may be accepted during busy state of some operations. Refer to the rightmost column of the command register
table below.)
F220h, default = 0000h
’2X Cache Program’ is executed by ’007F’. This command cannot be used alone and must be ended by ’007D’ for the last page program of cache pro-
gram. (Refer to 6.13 and 6.14)
15
14
001Ah
001Bh
007Dh
007Fh
002Ah
002Ch
000Eh
000Ch
000Ah
00B0h
00F0h
00F3h
0000h
0013h
0080h
0023h
0027h
0071h
0094h
0095h
0030h
0065h
CMD
13
12
11
Load single/multiple sector data unit into buffer
Load single/multiple spare sector into buffer
Program single/multiple sector data unit from buffer
Program single/multiple spare data unit from buffer
Copy back Program operation
2X Program operation
2X Cache Program operation
Unlock NAND array a block
Lock NAND array a block
Lock-tight NAND array a block
All Block Unlock
Erase Verify Read
Cache Read
Finish Cache Read
Synchronous Burst Block Read
Block Erase
Multi-Block Erase
Erase Suspend
Erase Resume
Reset NAND Flash Core
Reset MuxOneNAND
OTP Access
10
9
3)
2)
8
Command
65
2)
Operation
7
6
5
1)
4
FLASH MEMORY
3
2
00F0h, 00F3h
00F0h, 00F3h
00F0h, 00F3h
00F0h, 00F3h
00F0h, 00F3h
00F0h, 00F3h
00F0h, 00F3h
00F0h, 00F3h
00F0h, 00F3h
00F0h, 00F3h
00F0h, 00F3h
00F0h, 00F3h
00F0h, 00F3h
00F0h, 00F3h
00F0h, 00F3h
00F0h, 00F3h
00F0h, 00F3h
00F0h, 00F3h
00F0h, 00F3h
00F0h, 00F3h
during busy
Acceptable
command
1
-
-
0