kfm2g16q2m-deb8 Samsung Semiconductor, Inc., kfm2g16q2m-deb8 Datasheet - Page 90

• Manufacturer Part Number: kfm2g16q2m-deb8
• Description: 2gb Muxonenand M-die
• Manufacturer: Samsung Semiconductor, Inc.

MuxOneNAND2G(KFM2G16Q2M-DEBx)
MuxOneNAND4G(KFN4G16Q2M-DEBx)
MuxOneNAND8G(KFK8G16Q2M-DEBx)
3.4.3.1 Unlocked NAND Array Write Protection State
An Unlocked block can be programmed or erased. The status of an unlocked block can be changed to locked or locked-tight using
the appropriate software command. (locked-tight state can be achieved via lock-tight command which follows lock command)
Only one block can be released from lock state to unlock state with Unlock command and addresses. The unlocked block can be
changed with new lock command. Therefore, each block has its own lock/unlock/lock-tight state.
Also, By issuing All Block Unlock command, all blocks excluding Lock-tighten blocks will turn to Unlocked state.
3.4.3.2 Locked NAND Array Write Protection State
A Locked block cannot be programmed or erased. All blocks default to a locked state following a Cold or Warm Reset. Unlocked
blocks can be changed to locked using the Lock block command. The status of a locked block can be changed to unlocked or
locked-tight using the appropriate software command.
Unlocked
Unlocked
Locked
90
Unlock Command Sequence:
Start block address+Unlock block command (0023h)
All Block Unlock Command Sequence:
Start block address(000h)+All Block Unlock command (0027h)
Note) Even though SBA is fixed to 000h, Unlock will be done for
all block.
Lock Command Sequence:
Start block address+Lock block command (002Ah)
FLASH MEMORY