kfm2g16q2m-deb8 Samsung Semiconductor, Inc., kfm2g16q2m-deb8 Datasheet - Page 172

• Manufacturer Part Number: kfm2g16q2m-deb8
• Description: 2gb Muxonenand M-die
• Manufacturer: Samsung Semiconductor, Inc.

7.1.3
MuxOneNAND2G(KFM2G16Q2M-DEBx)
MuxOneNAND4G(KFN4G16Q2M-DEBx)
MuxOneNAND8G(KFK8G16Q2M-DEBx)
For general operation, INT operates as normal output pin, so that tF is equivalent to tR (below 10ns). But since INT operates as open
drain with 50K ohm for Reset (Cold/Hot/Warm/NAND Flash Core) operations and ’2X program operation’ case at DDP option, the
pull-up resistor value is related to tr(INT). And appropriate value can be obtained with the following reference charts.
Determining Rp Value (DDP, QDP Only)
Vcc or Vccq
~50k ohm
Ibusy
tr[us]
tf[ns]
INT
0.146
1.76
5.98
1K
KFN4G16Q2M @ Vcc = 1.8V, Ta = 25°C , C
1.126
10K
0.18
5.74
INT pol = ’High’ (Default)
Rp
2.192
20K
0.09
5.73
Ready Vcc
Rp(ohm)
172
2.912
0.06
30K
5.72
tf
3.485
0.045
40K
5.72
VOL
L
= 30pF
3.952
0.036
5.72
50K
Vss
Busy State
FLASH MEMORY
Open(100K)
5.416
0.000
tr
VOH