kfm2g16q2m-deb8 Samsung Semiconductor, Inc., kfm2g16q2m-deb8 Datasheet - Page 145

• Manufacturer Part Number: kfm2g16q2m-deb8
• Description: 2gb Muxonenand M-die
• Manufacturer: Samsung Semiconductor, Inc.

5.4
MuxOneNAND2G(KFM2G16Q2M-DEBx)
MuxOneNAND4G(KFN4G16Q2M-DEBx)
MuxOneNAND8G(KFK8G16Q2M-DEBx)
Note
1. If OE is disabled at the same time or before CE is disabled, the output will go to high-z by t
2. It is the following clock of address fetch clock.
Clock
Clock Cycle
Initial Access Time
Burst Access Time Valid Clock to Output Delay
AVD Setup Time to CLK
AVD Hold Time from CLK
AVD High to OE Low
Address Setup Time to CLK
Address Hold Time from CLK
Data Hold Time from Next Clock Cycle
Output Enable to Data
CE Disable to Output & RDY High Z
OE Disable to Output High Z
CE Setup Time to CLK
CLK High or Low Time
CLK
CLK to RDY Setup Time
RDY Setup Time to CLK
CE low to RDY valid
If CE is disabled at the same time or before OE is disabled, the output will go to high-z by t
If CE and OE are disabled at the same time, the output will go to high-z by t
2)
to RDY valid
AC Characteristics for Synchronous Burst Read
See Timing Diagrams 6.1, 6.2, 6.3, 6.4 and 6.24
Parameter
Symbol
t
t
t
t
t
t
t
CLKH/L
t
t
OEZ
CLK
t
t
t
CEZ
t
RDYO
RDYS
t
t
AVDS
AVDH
AVDO
RDYA
t
t
t
ACS
ACH
BDH
CES
CER
CLK
IAA
OE
BA
1)
1)
145
t
CLK
Min
OEZ
15
1
5
2
0
5
6
3
6
4
-
-
-
-
-
-
-
-
/3
.
66MHz
OEZ
CEZ
Max
66
70
20
20
15
15
11
11
11
-
-
-
-
-
-
-
-
-
-
.
.
Min
4.5
12
1
4
2
0
4
6
2
5
3
-
-
-
-
-
-
-
-
FLASH MEMORY
83MHz
Max
83
70
20
20
15
15
9
9
9
-
-
-
-
-
-
-
-
-
-
Unit
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns