kfm2g16q2m-deb8 Samsung Semiconductor, Inc., kfm2g16q2m-deb8 Datasheet - Page 7

• Manufacturer Part Number: kfm2g16q2m-deb8
• Description: 2gb Muxonenand M-die
• Manufacturer: Samsung Semiconductor, Inc.

1.5
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
MuxOneNAND2G(KFM2G16Q2M-DEBx)
MuxOneNAND4G(KFN4G16Q2M-DEBx)
MuxOneNAND8G(KFK8G16Q2M-DEBx)
MuxOneNAND
trol logic, a NAND Flash array, and 5KB of internal BufferRAM. The BufferRAM reserves 1KB for boot code buffering (BootRAM) and
4KB for data buffering (DataRAM), split between 2 independent buffers. It has a x16 Host Interface and a random access time speed
of ~76ns.
The device operates up to a maximum host-driven clock frequency of 66MHz / 83MHz for synchronous reads at Vcc(or Vccq. Refer
to chapter 4.2) with minimum 4-clock (66MHz) / 6-clock (83MHz) latency. Below 40MHz it is accessible with minimum 3-clock latency.
Appropriate wait cycles are determined by programmable read latency.
MuxOneNAND provides for multiple sector read operations by assigning the number of sectors to be read in the sector counter
register. The device includes one block-sized OTP (One Time Programmable) area and user-controlled 1st block OTP(Block 0) that
can be used to increase system security or to provide identification capabilities.
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
™
General Overview
‚ is a monolithic integrated circuit with a NAND Flash array using a NOR Flash interface. This device includes con-
7
FLASH MEMORY