h5tq4g43mmr Hynix Semiconductor, h5tq4g43mmr Datasheet - Page 15

• Manufacturer Part Number: h5tq4g43mmr
• Description: 4gb Ddr3 Sdram Ddp
• Manufacturer: Hynix Semiconductor

4. Operating Conditions
4.1 OPERATING TEMPERATURE CONDITION
4.2 RECOMMENDED DC OPERATING CONDITIONS
Rev. 0.1 /Aug 2008
Notes:
1. Operating Temperature TOPER is the case surface temperature on the center / top side of the DRAM.
2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported.
3. Some applications require operation of the DRAM in the Extended Temperature Range between 85
Notes:
1. Under all conditions, VDDQ must be less than or equal to VDD.
2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.
Symbol
TOPER
For measurement conditions, please refer to the JEDEC document JESD51-2.
During operation, the DRAM case temperature must be maintained between 0 - 85oC under all operating conditions.
temperature. Full specifications are guaranteed in this range, but the following additional conditions apply:
a) Refresh commands must be doubled in frequency, therefore reducing the Refresh interval tREFI to 3.9 µs.
Symbol
b) If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to either use
VDDQ
(This double refresh requirement may not apply for some devices.) It is also possible to specify a component with
VDD
1X refresh (tREFI to 7.8µs) in the Extended Temperature Range. Please refer to supplier data sheet and/or the
DIMM SPD for option availability.
enable the optional Auto Self-Refresh mode (MR2 A6 = 1b and MR2 A7 = 0b).
the Manual Self-Refresh mode with Extended Temperature Range capability (MR2 A6 = 0b and MR2 A7 = 1b) or
Operating Temperature (Tcase)
Extended Temperature Range
Supply Voltage
Supply Voltage for Output
Parameter
Parameter
1.425
1.425
Min.
Rating
1.500
1.500
85 to 95
Typ.
Rating
0 to 85
1.575
1.575
Max.
H5TQ4G43MMR-xxC
H5TQ4G83MMR-xxC
Units
o
o
o
C and 95
Units
C
C
V
V
o
Notes
C case
Notes
1,3
1,2
1,2
2
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