h5tq4g43mmr Hynix Semiconductor, h5tq4g43mmr Datasheet - Page 48

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h5tq4g43mmr

Manufacturer Part Number
h5tq4g43mmr
Description
4gb Ddr3 Sdram Ddp
Manufacturer
Hynix Semiconductor
Datasheet
Rev. 0.1 /Aug 2008
9. Input/Output Capacitance
Input/output capacitance
(DQ, DM, DQS, DQS, TDQS,
TDQS)
Input capacitance, CK and CK
Input capacitance delta
CK and CK
Input capacitance
(All other input-only pins)
Input capacitance delta, DQS and
DQS
Input capacitance delta
(All CTRL input-only pins)
Input capacitance delta
(All ADD/CMD input-only pins)
Input/output capacitance delta
Notes:
1. Although the DM, TDQS and TDQS pins have different functions, the loading matches DQ and DQS.
2. This parameter is not subject to production test. It is verified by design and characterization. The capacitance is
3. This parameter applies to monolithic devices only; stacked/dual-die devices are not covered here
4. Absolute value of C
5. The minimum C
6. Input only pins include: ODT, CS, CKE, A0-A15, BA0-BA2, RAS, CAS, WE.
7. CTRL pins defined as ODT, CS and CKE.
8. C
9. ADD pins defined as A0-A15, BA0-BA2 and CMD pins are defined as RAS, CAS and WE.
10. C
11. C
(DQ, DM, DQS, DQS)
measured according to JEP147(“PROCEDURE FOR MEASURING INPUT CAPACITANCE USING A VECTOR NETWORK
ANALYZER(VNA)”) with VDD, VDDQ, VSS,VSSQ applied and all other pins floating (except the pin under test, CKE,
RESET and ODT as necessary). VDD=VDDQ=1.5V, VBIAS=VDD/2 and on-die termination off.
DI_CTRL
DI_ADD_CMD
DIO
=C
=C
IO
Parameter
(DQ) - 0.5*(C
I
(CNTL) - 0.5 * C
=C
CK
I
(ADD_CMD) - 0.5*(C
will be equal to the minimum C
CK
-C
CK
IO
.
(DQS)+C
I
(CLK) + C
C
C
IO
Symbol
DI_ADD_C
C
DI_CTRL
C
(DQS))
C
C
I
C
DDQS
MD
(CLK)+C
DCK
C
I
DIO
CK
(CLK))
IO
I
I
(CLK))
I
.
0.75
Min
-0.5
-0.5
-0.5
1.5
0.8
0
0
DDR3-1066
Max
0.15
0.20
3.0
1.6
1.5
0.3
0.5
0.3
0.75
Min
-0.4
-0.4
-0.5
1.5
0.8
0
0
DDR3-1333
Max
0.15
0.15
1.4
1.3
0.2
0.4
0.3
2.5
H5TQ4G43MMR-xxC
H5TQ4G83MMR-xxC
Units
pF
pF
pF
pF
pF
pF
pF
pF
2,3,9,10
2,3,7,8
Notes
2,3,11
2,3,4
2,3,6
2,3,5
1,2,3
2,3
48

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