h5tq4g43mmr Hynix Semiconductor, h5tq4g43mmr Datasheet - Page 62

• Manufacturer Part Number: h5tq4g43mmr
• Description: 4gb Ddr3 Sdram Ddp
• Manufacturer: Hynix Semiconductor

Rev. 0.1 /Aug 2008
Table 13 - Derating values DDR3-1066/1333 tIS/tIH - ac/dc based
Table 14 - Required time t
CMD
Slew
ADD
V/ns
rate
/
Slew Rate
[V/ns]
> 2.0
< 0.5
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Alternate AC150 Threshold -> VIH (ac) = VREF (dc) + 150mV, VIL (ac) = VREF (dc) - 150mV
∆tIS ∆tIH ∆tIS ∆tIH ∆tIS
-10
-25
75
50
4.0 V/ns
-1
0
0
0
0
-10
-16
-26
-40
-60
50
34
-4
0
-10
-25
75
50
3.0 V/ns
-1
VAC
min
0
0
0
0
75
57
50
38
34
29
22
13
0
0
above VIH (ac) {below VIL (ac)} for valid transition
t
VAC
-10
-16
-26
-40
-60
50
34
-4
0
@ 175 mV [ps]
∆tIS, ∆tIH derating in [ps] AC/DC based
-10
-25
75
50
-1
2.0 V/ns
0
0
0
0
∆tIH
-10
-16
-26
-40
-60
50
34
-4
0
CK,CK Differential Slew Rate
max
∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH
-17
83
58
-
-
-
-
-
-
-
-
-
-
1.8 V/ns
-2
8
7
8
8
8
-18
-32
-52
58
42
-2
-8
4
8
91
66
16
16
16
16
15
1.6 V/ns
-9
6
-10
-24
-44
66
50
16
12
6
0
min
175
170
167
163
162
161
159
155
150
150
99
74
24
24
24
24
23
14
1.4 V/ns
-1
t
VAC
-16
-36
74
58
24
20
14
-2
@ 150 mV [ps]
8
H5TQ4G43MMR-xxC
H5TQ4G83MMR-xxC
107
82
32
32
32
32
31
22
1.2 V/ns
7
-26
30
84
68
34
24
18
-6
8
max
-
-
-
-
-
-
-
-
-
-
115
40
39
30
90
40
40
40
15
1.0 V/ns
100
-10
84
46
40
34
24
10
50
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