h5tq4g43mmr Hynix Semiconductor, h5tq4g43mmr Datasheet - Page 44

• Manufacturer Part Number: h5tq4g43mmr
• Description: 4gb Ddr3 Sdram Ddp
• Manufacturer: Hynix Semiconductor

Rev. 0.1 /Aug 2008
Table 7 - IDD4R and IDDQ24RMeasurement-Loop Pattern
a) DM must be driven LOW all the time. DQS, DQS are used according to RD Commands, otherwise FLOATING.
b) Burst Sequence driven on each DQ signal by Read Command. Outside burst operation, DQ signals are FLOATING.
Table 8 - IDD4W Measurement-Loop Pattern
a) DM must be driven LOW all the time. DQS, DQS are used according to WR Commands, otherwise FLOATING.
b) Burst Sequence driven on each DQ signal by Write Command. Outside burst operation, DQ signals are FLOATING.
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2,3
4
5
6,7
8-15
16-23
24-31
32-39
40-47
48-55
56-63
0
1
2,3
4
5
6,7
8-15
16-23
24-31
32-39
40-47
48-55
56-63
repeat Sub-Loop 0, but BA[2:0] = 2
repeat Sub-Loop 0, but BA[2:0] = 3
repeat Sub-Loop 0, but BA[2:0] = 4
repeat Sub-Loop 0, but BA[2:0] = 5
repeat Sub-Loop 0, but BA[2:0] = 6
repeat Sub-Loop 0, but BA[2:0] = 7
repeat Sub-Loop 0, but BA[2:0] = 2
repeat Sub-Loop 0, but BA[2:0] = 3
repeat Sub-Loop 0, but BA[2:0] = 4
repeat Sub-Loop 0, but BA[2:0] = 5
repeat Sub-Loop 0, but BA[2:0] = 6
repeat Sub-Loop 0, but BA[2:0] = 7
repeat Sub-Loop 0, but BA[2:0] = 1
repeat Sub-Loop 0, but BA[2:0] = 1
D,D
D,D
D,D
D,D
WR
WR
RD
RD
D
D
D
D
0
1
1
0
1
1
0
1
1
0
1
1
a)
1
0
1
1
0
1
1
0
1
1
0
1
0
0
1
0
0
1
0
0
1
0
0
1
1
0
1
1
0
1
0
0
1
0
0
1
a)
0
0
0
0
0
0
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
00
00
00
00
00
00
00
00
00
00
00
00
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
H5TQ4G43MMR-xxC
H5TQ4G83MMR-xxC
0
0
0
F
F
F
0
0
0
F
F
F
0
0
0
0
0
0
0
0
0
0
0
0
00000000
00110011
00000000
00110011
Data
Data
-
-
-
-
-
-
-
-
44
b)
b)