h5tq4g43mmr Hynix Semiconductor, h5tq4g43mmr Datasheet - Page 68

• Manufacturer Part Number: h5tq4g43mmr
• Description: 4gb Ddr3 Sdram Ddp
• Manufacturer: Hynix Semiconductor

Rev. 0.1 /Aug 2008
Table 16 - Derating values DDR3-1066 tDS/tDH - ac/dc based
Table 17 - Required time t
Slew
V/ns
DQ
rate
a.Cell contents shaded in red are defined as ‘not supported’.
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
∆tDS
88
59
0
4.0 V/ns
-
-
-
-
-
-
∆tDH
50
34
0
-
-
-
-
-
-
∆tDS
88
59
-2
0
3.0 V/ns
-
-
-
-
-
VAC
Slew Rate [V/ns]
above VIH (ac) {below VIL (ac)} for valid transition
∆tDH
50
34
-4
0
-
-
-
-
-
> 2.0
< 0.5
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
∆tDS, ∆DH derating in [ps] AC/DC based
∆tDS
88
59
-2
-6
0
-
-
-
-
2.0 V/ns
∆tDH
-10
50
34
-4
0
-
-
-
-
DQS, DQS Differential Slew Rate
∆tDS
67
-3
8
6
2
1.8 V/ns
-
-
-
-
∆tDH
42
-2
-8
8
4
-
-
-
-
min
75
57
50
38
34
29
22
13
0
0
∆tDS
16
14
10
-1
5
1.6 V/ns
-
-
-
-
t
VAC
∆tDH
-10
16
12
6
0
-
-
-
-
[ps]
a
∆tDS
-11
22
18
13
7
1.4 V/ns
-
-
-
-
max
-
-
-
-
-
-
-
-
-
-
∆tDH
-16
20
14
-2
8
-
-
-
-
H5TQ4G43MMR-xxC
H5TQ4G83MMR-xxC
∆tDS
-30
26
21
15
-2
1.2 V/ns
-
-
-
-
∆tDH
-26
24
18
-6
8
-
-
-
-
∆tDS
-22
29
23
5
1.0 V/ns
-
-
-
-
-
68
∆tDH
-10
34
24
10
-
-
-
-
-