h5tq4g43mmr Hynix Semiconductor, h5tq4g43mmr Datasheet - Page 8

• Manufacturer Part Number: h5tq4g43mmr
• Description: 4gb Ddr3 Sdram Ddp
• Manufacturer: Hynix Semiconductor

Rev. 0.1 /Aug 2008
1.4 Pin Functional Description
Input / output functional description
DM, (DMU),
BA0 - BA2
A12 / BC
CAS. WE
A0 - A15
A10 / AP
Symbol
CK, CK
RESET
(DML)
RAS.
ODT
CKE
CS
Type
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Clock: CK and CK are differential clock inputs. All address and control input signals are
sampled on the crossing of the positive edge of CK and negative edge of CK.
Clock Enable: CKE HIGH activates, and CKE Low deactivates, internal clock signals and device
input buffers and output drivers. Taking CKE Low provides Precharge Power-Down and Self-
Refresh operation (all banks idle), or Active Power-Down (row Active in any bank).
CKE is asynchronous for Self-Refresh exit. After VREFCA and VREFDQ have become stable
during the power on and initialization sequence, they must be maintained during all
operations (including Self-Refresh). CKE must be maintained high throughout read and write
accesses. Input buffers, excluding CK, CK, ODT and CKE are disabled during power-down.
Input buffers, excluding CKE, are disabled during Self-Refresh.
Chip Select: All commands are masked when CS is registered HIGH.
CS provides for external Rank selection on systems with multiple Ranks.
CS is considered part of the command code.
On Die Termination: ODT (registered HIGH) enables termination resistance internal to the
DDR3 SDRAM. When enabled, ODT is only applied to each DQ, DQS, DQS and DM/TDQS, NU/
TDQS (When TDQS is enabled via Mode Register A11=1 in MR1) signal for x4/x8
configurations. For x16 configuration ODT is applied to each DQ, DQSU, DQSU, DQSL, DQSL,
DMU, and DML signal.
The ODT pin will be ignored if MR1 is programmed to disable ODT.
Command Inputs: RAS, CAS and WE (along with CS) define the command being entered.
Input Data Mask: DM is an input mask signal for write data. Input data is masked when DM is
sampled HIGH coincident with that input data during a Write access. DM is sampled on both
edges of DQS. For x8 device, the function of DM or TDQS/TDQS is enabled by Mode Register
A11 setting in MR1.
Bank Address Inputs: BA0 - BA2 define to which bank an Active, Read, Write or Precharge
command is being applied. Bank address also determines if the mode register or extended
mode register is to be accessed during a MRS cycle.
Address Inputs: Provide the row address for Active commands and the column address for
Read/Write commands to select one location out of the memory array in the respective bank.
(A10/AP and A12/BC have additional functions, see below).
The address inputs also provide the op-code during Mode Register Set commands.
Auto-precharge: A10 is sampled during Read/Write commands to determine whether
Autoprecharge should be performed to the accessed bank after the Read/Write operation.
(HIGH: Autoprecharge; LOW: no Autoprecharge).A10 is sampled during a Precharge
command to determine whether the Precharge applies to one bank (A10 LOW) or all banks
(A10 HIGH). If only one bank is to be precharged, the bank is selected by bank addresses.
Burst Chop: A12 / BC is sampled during Read and Write commands to determine if burst chop
(on-the-fly) will be performed.
(HIGH, no burst chop; LOW: burst chopped). See command truth table for details.
Active Low Asynchronous Reset: Reset is active when RESET is LOW, and inactive when
RESET is HIGH. RESET must be HIGH during normal operation.
RESET is a CMOS rail to rail signal with DC high and low at 80% and 20% of V
for DC high and 0.30V for DC low.
Function
H5TQ4G43MMR-xxC
H5TQ4G83MMR-xxC
DD
, i.e. 1.20V
8