h5tq4g43mmr Hynix Semiconductor, h5tq4g43mmr Datasheet - Page 31

• Manufacturer Part Number: h5tq4g43mmr
• Description: 4gb Ddr3 Sdram Ddp
• Manufacturer: Hynix Semiconductor

Rev. 0.1 /Aug 2008
Apply VIH (ac) to pin under test and measure current I(VIH (ac)), then apply VIL (ac) to pin under test and measure cur-
rent I(VIL (ac)) respectively.
Measurement definition for VM and DVM:
Measure voltage (VM) at test pin (midpoint) with no load:
7.5.3 ODT Temperature and Voltage sensitivity
If temperature and/or voltage change after calibration, the tolerance limits widen according to Table and Table .
DT = T - T (@calibration); DV= VDDQ - VDDQ (@calibration); VDD = VDDQ
ODT Sensitivity Definition
ODT Voltage and Temperature Sensitivity
These parameters may not be subject to production test. They are verified by design and characterization
∆
RTT
V M
dR
dR
TT
TT
=
dT
dV
⎛
⎝
2 V M
----------------- - 1
V DDQ
•
0.9 - dR
–
TT
dT*|∆T| - dR
⎞
⎠
RTT
•
min
100
min
0
0
=
TT
dV*|∆V|
-------------------------------------------------------- -
I(VIH(ac)) I(VIL(ac))
V IH(ac) V IL(ac)
–
–
1.6 + dR
TT
max
0.15
1.5
dT*|∆T| + dR
max
TT
dV*|∆V|
H5TQ4G43MMR-xxC
H5TQ4G83MMR-xxC
%/mV
%/
unit
RZQ/2,4,6,8,12
o
C
unit
31