HYB18L256160B QIMONDA [Qimonda AG], HYB18L256160B Datasheet - Page 3

• Manufacturer Part Number: HYB18L256160B
• Description: DRAMs for Mobile Applications 256-Mbit Mobile-RAM
• Manufacturer: QIMONDA [Qimonda AG]

1
1.1
• 4 banks × 4 Mbit × 16 organization
• Fully synchronous to positive clock edge
• Four internal banks for concurrent operation
• Programmable CAS latency: 2, 3
• Programmable burst length: 1, 2, 4, 8 or full page
• Programmable wrap sequence: sequential or interleaved
• Programmable drive strength
• Auto refresh and self refresh modes
• 8192 refresh cycles / 64 ms
• Auto precharge
• Commercial (0°C to +70°C) and Extended (-25°C to +85°C) operating temperature range
• 54-ball P-VFBGA package (12.0 × 8.0 × 1.0 mm)
Power Saving Features
• Low supply voltages:
• Optimized self refresh (
• Programmable Partial Array Self Refresh (PASR)
• Temperature Compensated Self-Refresh (TCSR), controlled by on-chip temperature sensor
• Power-Down and Deep Power Down modes
Rev. 1.73, 2006-09
01302004-CZ2R-J9SE
Part Number Speed Code
Speed Grade
Access Time (
Clock Cycle Time (
Item
Banks
Rows
Columns
t
ACmax
t
CKmin
)
Overview
Features
V
)
DD
I
DD6
= 1.65V to 1.95V,
) and standby currents (
CL = 3
CL = 2
CL = 3
CL = 2
Addresses
BA0, BA1
A0 - A12
A0 - A8
V
DDQ
= 1.65V to 1.95V
I
DD2
/
I
DD3
3
)
- 7.5
133
5.4
6.0
7.5
9.5
Memory Addressing Scheme
HY[B/E]18L256160B[C/F]L-7.5
Unit
MHz
ns
ns
ns
ns
256-Mbit Mobile-RAM
Performance
TABLE 1
TABLE 2
Data Sheet