HYB18L256160B QIMONDA [Qimonda AG], HYB18L256160B Datasheet - Page 52

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HYB18L256160B

Manufacturer Part Number
HYB18L256160B
Description
DRAMs for Mobile Applications 256-Mbit Mobile-RAM
Manufacturer
QIMONDA [Qimonda AG]
Datasheet

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1) 0 °C ≤
2) The On-Chip Temperature Sensor (OCTS) adjusts the refresh rate in self refresh mode to the component’s actual temperature with a much
Rev. 1.73, 2006-09
01302004-CZ2R-J9SE
Parameter & Test Conditions
Self Refresh Current:
Self refresh mode,
full array activation
(PASR = 000)
Self Refresh Current:
Self refresh mode,
half array activation
(PASR = 001)
Self Refresh Current:
Self refresh mode,
quarter array activation
(PASR = 010)
finer resolution than supported by the 4 distinct temperature levels as defined by JEDEC for TCSR. At production test the sensor is
calibrated, and IDD6 max. current is measured at 85°C. Typ. values are obtained from device characterization.
T
C
≤ 70 °C (comm.); -25 °C ≤
85 °C
70 °C
45 °C
25 °C
85 °C
70 °C
45 °C
25 °C
85 °C
70 °C
45 °C
25 °C
Temperature
T
C
Max.
≤ 85 °C (ext.);
I
Symbol
DD6
V
DD
=
V
DDQ
510
340
225
205
400
285
200
180
340
250
185
170
HY[B/E]256160B[C/F]
52
= 1.65V to 1.95V
typ.
Values for
600
470
400
max.
Values for
HYE256160B[C/F]L
430
285
190
175
305
220
155
140
245
180
135
120
typ.
HY[B/E]18L256160B[C/F]L-7.5
450
320
260
Self Refresh Currents
max.
256-Mbit Mobile-RAM
TABLE 28
µA
Units Note
Data Sheet
1)2)

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