HYB18L256160B QIMONDA [Qimonda AG], HYB18L256160B Datasheet - Page 49

• Manufacturer Part Number: HYB18L256160B
• Description: DRAMs for Mobile Applications 256-Mbit Mobile-RAM
• Manufacturer: QIMONDA [Qimonda AG]

1) 0 ⎦C ≤
2)
3.2
Rev. 1.73, 2006-09
01302004-CZ2R-J9SE
Parameter
Power Supply Voltage
Power Supply Voltage for DQ Output Buffer
Input high voltage
Input low voltage
Output high voltage (
Output low voltage (
Input leakage current
Output leakage current
Parameter
Clock cycle time
Clock frequency
Access time from CLK
Clock high-level width
Clock low-level width
Address, data and command input setup time
Address, data and command input hold time
Data (DQ) input hold time
MODE REGISTER SET command period
DQ low-impedance time from CLK
DQ high-impedance time from CLK
Data out hold time
DQM to DQ High-Z delay (READ Commands)
V
Pulse width measured at 50% with amplitude measured between peak voltage and DC reference level.
IH
may overshoot to
T
C
≤ 70 °C (comm.); -25 °C ≤
I
AC Characteristics
I
OL
OH
V
DD
= 0.1 mA)
= -0.1 mA)
+ 0.8 V for pulse width < 4 ns;
T
C
≤ 85 °C (ext.); All voltages referenced to
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
V
V
V
V
V
V
I
I
IL
OL
DD
DDQ
IH
IL
OH
OL
Symbol
V
IL
may undershoot to -0.8 V for pulse width < 4 ns.
49
1.65
1.65
0.8 ×
-0.3
V
–
-1.0
-1.5
t
f
t
t
t
t
t
t
t
t
t
t
DDQ
CK
CK
AC
CH
CL
IS
IH
MRD
LZ
HZ
OH
DQZ
Symbol
Min.
- 0.2
V
DDQ
Values
V
7.5
9.5
—
—
—
—
2.5
2.5
1.5
0.5
0.8
2
1.0
3.0
2.5
—
SS
.
1.95
1.95
V
0.3
–
0.2
1.0
1.5
V
min.
DDQ
SS
and
Max.
+ 0.3
- 7.5
V
SSQ
7.0
—
—
133
105
5.4
6.0
—
—
—
—
—
—
—
—
2
HY[B/E]18L256160B[C/F]L-7.5
must be at same potential.
max.
Electrical Characteristics
V
V
V
V
V
V
µΑ
µA
Unit
256-Mbit Mobile-RAM
AC Characteristics
ns
ns
MHz
MHz
ns
ns
ns
ns
ns
t
ns
ns
ns
t
CK
CK
Unit
TABLE 25
TABLE 26
–
–
2)
2)
–
–
–
–
—
—
5)6)
—
—
7)
7)
—
—
—
5)6)
—
Note
Data Sheet
Note
1)2)3)4)
1)