HYB18L256160B QIMONDA [Qimonda AG], HYB18L256160B Datasheet - Page 48

• Manufacturer Part Number: HYB18L256160B
• Description: DRAMs for Mobile Applications 256-Mbit Mobile-RAM
• Manufacturer: QIMONDA [Qimonda AG]

3
3.1
Attention: Stresses above those listed here may cause permanent damage to the device. Exposure to absolute
1) These values are not subject to production test but verified by device characterization.
2) Input capacitance is measured according to JEP147 with
Rev. 1.73, 2006-09
01302004-CZ2R-J9SE
Parameter
Power Supply Voltage
Power Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Operation Case Temperature
Storage Temperature
Power Dissipation
Short Circuit Output Current
Parameter
Input capacitance: CLK
Input capacitance: all other input
Input/Output capacitance: DQ
should be in high impedance state.
maximum rating conditions for extended periods may affect device reliability.
Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage
to the integrated circuit.
Electrical Characteristics
Operating Conditions
Commercial
Extended
C
C
C
I1
I2
IO
Symbol
V
DD
,
V
1.5
1.5
3.0
DDQ
48
V
V
V
V
T
T
P
I
Symbol
applied and all other pins (except the pin under test) floating. DQ’s
OUT
C
STG
DD
DDQ
IN
OUT
D
min.
Values
-0.3
-0.3
-0.3
-0.3
0
-25
-55
–
–
3.0
3.0
5.0
min.
max.
Values
HY[B/E]18L256160B[C/F]L-7.5
Absolute Maximum Ratings
2.7
2.7
V
V
+70
+85
+150
0.7
50
pF
pF
pF
DDQ
DDQ
max.
+ 0.3
+ 0.3
Unit
256-Mbit Mobile-RAM
Pin Capacitances
TABLE 23
TABLE 24
Note
V
V
V
V
°C
°C
°C
W
mA
Data Sheet
1)2)
Unit