HYB18L256160B QIMONDA [Qimonda AG], HYB18L256160B Datasheet - Page 8

• Manufacturer Part Number: HYB18L256160B
• Description: DRAMs for Mobile Applications 256-Mbit Mobile-RAM
• Manufacturer: QIMONDA [Qimonda AG]

2.1
The Mobile-RAM must be powered up and initialized in a predefined manner (see
those specified may result in undefined operation.
1. At first, device core power (
2. After
3. Wait for 200µs while issuing NOP or DESELECT commands.
4. Issue a PRECHARGE ALL command, followed by NOP or DESELECT commands for at least
5. Issue two AUTO REFRESH commands, each followed by NOP or DESELECT commands for at least
6. Issue two MODE REGISTER SET commands for programming the Mode Register and Extended Mode Register, each
Following these steps, the Mobile-RAM is ready for normal operation.
Rev. 1.73, 2006-09
01302004-CZ2R-J9SE
are driven from a single power converter output.
Assert and hold CKE and DQM to a HIGH level.
followed by NOP or DESELECT commands for at least
not important. Programming of the Extended Mode Register may be omitted when default values (half drive strength, 4 bank
refresh) will be used.
V
DD
and
V
DDQ
Power On and Initialization
are stable and CKE is HIGH, apply stable clocks.
V
DD
) and device IO power (
V
t
DDQ
MRD
8
) must be brought up simultaneously. Typically
period; the order in which both registers are programmed is
Power-Up Sequence and Mode Register Sets
Figure
3). Operational procedures other than
HY[B/E]18L256160B[C/F]L-7.5
t
RP
256-Mbit Mobile-RAM
period.
t
RFC
FIGURE 3
period.
V
DD
Data Sheet
and
V
DDQ