S71GS128NB0 SPANSION [SPANSION], S71GS128NB0 Datasheet - Page 127
S71GS128NB0
Manufacturer Part Number
S71GS128NB0
Description
128N based MCPs
Manufacturer
SPANSION [SPANSION]
Datasheet
1.S71GS128NB0.pdf
(195 pages)
- Current page: 127 of 195
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Note: I
Note:I
October 4, 2004 cellRAM_00_A0
Partially Array Refresh Standby
Temperature Compensated
Deep Power-down
Refresh Standby Current
PAR
PAR
Description
(MAX) values measured with TCR set to 85°C.
(MAX) values measured with TCR set to 85°C.
Description
Description
Current
Table 27. Temperature Compensated Refresh Specifications and Conditions
Table 28. Partial Array Refresh Specifications and Conditions
A d v a n c e
V
IN
= V
Table 29. Deep Power-Down Specifications
V
V
CC
IN
IN
CE# = V
CE# = V
Q or 0V; +25°C; V
Conditions
= V
Conditions
= V
CC
CC
Conditions
Q or 0V,
Q or 0V,
CC
CC
I n f o r m a t i o n
Q
Q
CellularRAM Type 2
Symbol
Symbol
CC
I
I
TCR
PAR
= 1.8V
128 Mb
Density
Density
64 Mb
32 Mb
64 Mb
32 Mb
Symbol
I
ZZ
Temperature
Max Case
Partition
+85
+70
+45
+15
+85
+70
+45
+15
Array
Full
Full
Full
1/2
1/4
1/8
1/2
1/4
1/8
0
0
0
°
°
°
°
°
°
°
°
C
C
C
C
C
C
C
C
Typ
10
(No Desig.)
(No Desig.)
Standard
Standard
Power
Power
120
105
110
120
115
110
105
110
105
100
180
85
70
95
80
70
70
95
70
50
Units
µA
Units
Units
µA
µA
127
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