MC9S12C128CFUE Freescale Semiconductor, MC9S12C128CFUE Datasheet - Page 613

• Manufacturer Part Number: MC9S12C128CFUE
• Description: IC MCU 128K FLASH 25MHZ 80-QFP
• Manufacturer: Freescale Semiconductor
• Series: HCS12r

Specifications of MC9S12C128CFUE

• Core Processor: HCS12
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: CAN, EBI/EMI, SCI, SPI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 60
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 2.35 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 80-QFP
• Cpu Family: HCS12
• Device Core Size: 16b
• Frequency (max): 25MHz
• Interface Type: CAN/SCI/SPI
• Total Internal Ram Size: 4KB
• # I/os (max): 60
• Number Of Timers - General Purpose: 8
• Operating Supply Voltage (typ): 2.5/5V
• Operating Supply Voltage (max): 2.75/5.5V
• Operating Supply Voltage (min): 2.35/2.97V
• On-chip Adc: 8-chx10-bit
• Instruction Set Architecture: CISC
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 80
• Package Type: PQFP
• Processor Series: S12C
• Core: HCS12
• Data Bus Width: 16 bit
• Data Ram Size: 4000 B
• Maximum Clock Frequency: 25 MHz
• Number Of Programmable I/os: 61
• Number Of Timers: 1
• Operating Supply Voltage: - 0.3 V to + 6.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWHCS12
• Development Tools By Supplier: M68EVB912C32EE
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Compliant

Chapter 21
128 Kbyte Flash Module (S12FTS128K1V1)
21.1
The
one array of
bytes). The Flash array may be read as either bytes, aligned words, or misaligned words. Read access time
is one bus cycle for byte and aligned word, and two bus cycles for misaligned words.
The Flash array is ideal for program and data storage for single-supply applications allowing for field
reprogramming without requiring external voltage sources for program or erase. Program and erase
functions are controlled by a command driven interface. The Flash module supports both mass erase and
sector erase. An erased bit reads 1 and a programmed bit reads 0. The high voltage required to program
and erase is generated internally. It is not possible to read from a Flash array while it is being erased or
programmed.
21.1.1
Command Write Sequence — A three-step MCU instruction sequence to program, erase, or erase verify
the Flash array memory.
21.1.2
Freescale Semiconductor
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•
•
•
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FTS128K1
128
bytes
Automated program and erase algorithm
Interrupts on Flash command completion and command buffer empty
Fast sector erase and word program operation
2-stage command pipeline for faster multi-word program times
Flexible protection scheme to prevent accidental program or erase
Single power supply for Flash program and erase operations
Security feature to prevent unauthorized access to the Flash array memory
Introduction
Kbytes of Flash memory comprised of one
Glossary
Features
128
A Flash word must be in the erased state before being programmed.
Cumulative programming of bits within a Flash word is not allowed.
module implements a
Kbytes organized as
MC9S12C-Family / MC9S12GC-Family
1024
128
Kbyte Flash (nonvolatile) memory. The Flash memory contains
rows of
CAUTION
Rev 01.24
128
bytes with an erase sector size of eight rows
128
Kbyte array divided into
128
sectors of
(1024
1024
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