MCHC912B32CFUE8 Freescale Semiconductor, MCHC912B32CFUE8 Datasheet - Page 104

• Manufacturer Part Number: MCHC912B32CFUE8
• Description: IC MCU 32K FLASH 8MHZ 80-QFP
• Manufacturer: Freescale Semiconductor
• Series: HC12r

Specifications of MCHC912B32CFUE8

• Core Processor: CPU12
• Core Size: 16-Bit
• Speed: 8MHz
• Connectivity: SCI, SPI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 63
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 768 x 8
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 80-QFP
• Cpu Family: HC12
• Device Core Size: 16b
• Frequency (max): 8MHz
• Interface Type: SCI/SPI
• Total Internal Ram Size: 1KB
• # I/os (max): 63
• Operating Supply Voltage (typ): 5V
• Operating Supply Voltage (max): 5.5V
• Operating Supply Voltage (min): 4.5V
• On-chip Adc: 8-chx10-bit
• Instruction Set Architecture: CISC
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 80
• Package Type: PQFP
• Package: 80PQFP
• Family Name: HC12
• Maximum Speed: 8 MHz
• Operating Supply Voltage: 5 V
• Data Bus Width: 16 Bit
• Number Of Programmable I/os: 63
• Processor Series: HC912B
• Core: HC12
• Data Ram Size: 1 KB
• Maximum Clock Frequency: 8 MHz
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWHCS12
• Development Tools By Supplier: M68EVB912B32E
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FLASH EEPROM
8.4.3.2 Program/Erase Verification
When programming or erasing the FLASH EEPROM array, a special verification method is required to
ensure that the program/erase process is reliable and also to provide the longest possible life expectancy.
This method requires stopping the program/erase sequence at periods of t
to determine if the FLASH EEPROM is programmed/erased. After the location reaches the proper value,
it must continue to be programmed/erased with additional margin pulses to ensure that it will remain
programmed/erased. Failure to provide the margin pulses could lead to corrupted or unreliable data.
8.4.3.3 Program/Erase Sequence
To begin a program or erase sequence, the external V
ERAS bit must be set or cleared, depending on whether a program sequence or an erase sequence is to
occur. The LAT bit will be set to cause any subsequent data written to a valid address within the FLASH
EEPROM to be latched into the programming address and data latches. The next FLASH array write cycle
must be either to the location that is to be programmed if a programming sequence is being performed,
or, if erasing, to any valid FLASH EEPROM array location. Writing the new address and data information
to the FLASH EEPROM is followed by assertion of ENPE to turn on the program/erase voltage to
program/erase the new location(s). The LAT bit must be asserted and the address and data latched to
allow the setting of the ENPE control bit. If the data and address have not been latched, an attempt to
assert ENPE will be ignored and ENPE will remain negated after the write cycle to FEECTL is completed.
The LAT bit must remain asserted and the ERAS bit must remain in its current state as long as ENPE is
asserted. A write to the LAT bit to clear it while ENPE is set will be ignored. That is, after the write cycle,
LAT will remain asserted. Likewise, an attempt to change the state of ERAS will be ignored and the state
of the ERAS bit will remain unchanged.
The programming software is responsible for all timing during a program sequence. This includes the total
number of program pulses (n
(p
The erase software is responsible for all timing during an erase sequence. This includes the total number
of erase pulses (e
delay between turning off the high voltage and verifying the operation (t
Software also controls the supply of the proper program/erase voltage to the V
proper level before ENPE is set during a program/erase sequence.
A program/erase cycle should not be in progress when starting another program/erase or while
attempting to read from the array.
104
m
) and the delay between turning off the high voltage and verifying the operation (t
Although clearing ENPE disables the program/erase voltage (V
V
whenever programming/erasing is not in progress. Not doing so could
damage the part. Ensuring that V
be accomplished by controlling the V
software via an output pin. Alternatively, all programming and erasing can
be done prior to installing the device on an application circuit board which
can always connect V
by plugging the board into a special programming fixture which provides
program/erase voltage to the V
FP
m
pin to the array, care must be taken to ensure that V
), the length of the erase pulse (t
PP
), the length of the program pulse (t
M68HC12B Family Data Sheet, Rev. 9.1
FP
to V
DD
FP
. Programming can also be accomplished
FP
NOTE
pin.
FP
is always greater or equal to V
EPULSE
power supply with the programming
FP
voltage must be applied and stabilized. The
), the erase margin pulse or pulses, and the
PPULSE
VERASE
FP
), the program margin pulses
PPULSE
is at V
FP
FP
).
) from the
pin and should be at the
DD
DD
(t
Freescale Semiconductor
EPULSE
VPROG
can
).
for erasing)