MC9S08QD4VSC Freescale Semiconductor, MC9S08QD4VSC Datasheet - Page 40

• Manufacturer Part Number: MC9S08QD4VSC
• Description: IC MCU 4K FLASH 256RAM 8-SOIC
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08QD4VSC

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 10MHz
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 4
• Program Memory Size: 4KB (4K x 8)
• Program Memory Type: FLASH
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 4x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 8-SOIC (3.9mm Width)
• Processor Series: S08QD
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 256 B
• Interface Type: I2C, SCI, SPI
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 4
• Number Of Timers: 3
• Operating Supply Voltage: 2.7 V to 5.5 V
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: DEMO9S08QD4
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 4-ch x 10-bit
• Cpu Family: HCS08
• Device Core Size: 8b
• Frequency (max): 8MHz
• Total Internal Ram Size: 256Byte
• # I/os (max): 4
• Number Of Timers - General Purpose: 3
• Operating Supply Voltage (typ): 3.3/5V
• Operating Supply Voltage (max): 5.5V
• Operating Supply Voltage (min): 2.7V
• Instruction Set Architecture: CISC
• Operating Temp Range: -40C to 105C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• For Use With: DEMO9S08QD4 - BOARD DEMO FOR MC9S08QD FAMILY
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Connectivity: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Chapter 4 Memory Map and Register Definition
program command is issued, the charge pump is enabled and then remains enabled after completion of the
burst program operation if these two conditions are met:
The first byte of a series of sequential bytes being programmed in burst mode will take the same amount
of time to program as a byte programmed in standard mode. Subsequent bytes will program in the burst
program time provided that the conditions above are met. In the case the next sequential address is the
beginning of a new row, the program time for that byte will be the standard time instead of the burst time.
This is because the high voltage to the array must be disabled and then enabled again. If a new burst
command has not been queued before the current command completes, then the charge pump will be
disabled and high voltage removed from the array.
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The next burst program command has been queued before the current program operation has
completed.
The next sequential address selects a byte on the same physical row as the current byte being
programmed. A row of flash memory consists of 64 bytes. A byte within a row is selected by
addresses A5 through A0. A new row begins when addresses A5 through A0 are all 0s.
MC9S08QD4 Series MCU Data Sheet, Rev. 6
Freescale Semiconductor