M38D59GCHP#U0 Renesas Electronics America, M38D59GCHP#U0 Datasheet - Page 76

IC 740/38D5 MCU QZ-ROM 80LQFP

M38D59GCHP#U0

Manufacturer Part Number
M38D59GCHP#U0
Description
IC 740/38D5 MCU QZ-ROM 80LQFP
Manufacturer
Renesas Electronics America
Series
740/38000r
Datasheet

Specifications of M38D59GCHP#U0

Core Processor
740
Core Size
8-Bit
Speed
12.5MHz
Connectivity
SIO, UART/USART
Peripherals
LCD, LED, PWM, WDT
Number Of I /o
59
Program Memory Size
48KB (48K x 8)
Program Memory Type
QzROM
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 85°C
Package / Case
80-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M38D59GCHP#U0
Manufacturer:
Renesas Electronics America
Quantity:
10 000
38D5 Group
Rev.3.04
REJ03B0158-0304
FLASH MEMORY MODE
The 38D5 Group flash memory version has the flash memory
that can be rewritten with a single power source.
For this flash memory, three flash memory modes are available
in which to read, program, and erase: the parallel I/O and
standard serial I/O modes in which the flash memory can be
manipulated using a programmer and the CPU rewrite mode in
which the flash memory can be manipulated by the Central
Processing Unit (CPU). For details of each mode, refer to the
next and after pages. Contact the manufacturer of your
programmer for the programmer. Refer to the user's manual of
your programmer for details on how to use it.
Performance overview
Table 16 lists the performance overview of the 38D5 Group flash
memory version.
Table 16 Performance overview of 38D5 Group flash memory version
NOTE:
Power source voltage (Vcc)
Program/Erase VPP voltage (V
Flash memory mode
Erase block division
Program method
Erase method
Program/Erase control method
Number of commands
Number of program/Erase times
ROM code protection
1. The Boot ROM area has had a standard serial I/O mode control program stored in it when shipped from the factory.
This Boot ROM area can be erased and written in only parallel I/O mode.
May 20, 2008 Page 74 of 134
User ROM area/Data ROM area
Boot ROM area
Parameter
PP
)
(1)
V
V
3 modes; Parallel I/O mode, Standard serial I/O mode, CPU
rewrite mode
Refer to Figure 70.
Not divided (4K bytes)
In units of bytes
Block erase
Program/Erase control by software command
5 commands
100
Available in parallel I/O mode and standard serial I/O mode
CC
CC
This flash memory version has some blocks on the flash memory
as shown in Figure 70 and each block can be erased.
In addition to the ordinary User ROM area to store the MCU
operation control program, the flash memory has a Boot ROM
area that is used to store a program to control rewriting in CPU
rewrite and standard serial I/O modes. This Boot ROM area has
had a standard serial I/O mode control program stored in it when
shipped from the factory. However, the user can write a rewrite
control program in this area that suits the user’s application
system. This Boot ROM area can be rewritten in only parallel I/O
mode.
= 2.7 to 5.5 V
= 2.7 to 5.5 V
Function

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