DF2161BVTE10 Renesas Electronics America, DF2161BVTE10 Datasheet - Page 124

MCU 3V 128K 144-TQFP

DF2161BVTE10

Manufacturer Part Number
DF2161BVTE10
Description
MCU 3V 128K 144-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheet

Specifications of DF2161BVTE10

Core Processor
H8S/2000
Core Size
16-Bit
Speed
10MHz
Connectivity
Host Interface (LPC), I²C, IrDA, SCI, X-Bus
Peripherals
PWM, WDT
Number Of I /o
114
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
144-TQFP, 144-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2161BVTE10
HD64F2161BVTE10
Section 3 MCU Operating Modes
Bit
3
2
1
0
Rev. 3.00 Mar 21, 2006 page 68 of 788
REJ09B0300-0300
Bit Name
FLSHE
ICKS1
ICKS0
Initial Value
0
0
0
0
R/W
R/W
R/(W)
R/W
R/W
Description
Flash Memory Control Register Enable
Enables or disables CPU access for flash memory
registers (FLMCR1, FLMCR2, EBR1, EBR2), control
registers in power-down state (SBYCR, LPWRCR,
MSTPCRH, MSTPCRL), and control registers of on-
chip peripheral modules (PCSR, SYSCR2).
0: Registers in power-down state and control
1: Control registers of flash memory are accessed in
Reserved
The initial value should not be changed.
Internal Clock Source Select 1, 0
These bits select a clock to be input to the timer
counter (TCNT) and a count condition together with
bits CKS2 to CKS0 in the timer control register
(TCR). For details, refer to section 12.3.4, Timer
Control Register (TCR).
registers of on-chip peripheral modules are
accessed in an area from H'(FF)FF80 to
H'(FF)FF87.
an area from H'(FF)FF80 to H'(FF)FF87.

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