DF2161BVTE10 Renesas Electronics America, DF2161BVTE10 Datasheet - Page 682
DF2161BVTE10
Manufacturer Part Number
DF2161BVTE10
Description
MCU 3V 128K 144-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheet
1.DF2160BVT10V.pdf
(847 pages)
Specifications of DF2161BVTE10
Core Processor
H8S/2000
Core Size
16-Bit
Speed
10MHz
Connectivity
Host Interface (LPC), I²C, IrDA, SCI, X-Bus
Peripherals
PWM, WDT
Number Of I /o
114
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
144-TQFP, 144-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2161BVTE10
HD64F2161BVTE10
HD64F2161BVTE10
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Section 23 ROM
23.8.2
When erasing flash memory, the erase/erase-verify flowchart shown in figure 23.12 should be
followed.
1. Prewriting (setting erase block data to all 0) is not necessary.
2. Erasing is performed in block units. Make only a single-block specification in erase block
3. The time during which the E bit is set to 1 is the flash memory erase time.
4. The watchdog timer (WDT) is set to prevent overprogramming due to program runaway, etc.
5. For a dummy write to a verify address, write 1-byte data H'FF to an address whose lower two
6. If the read data is unerased, set erase mode again, and repeat the erase/erase-verify sequence as
Rev. 3.00 Mar 21, 2006 page 626 of 788
REJ09B0300-0300
registers 1 and 2 (EBR1 and EBR2). To erase multiple blocks, each block must be erased in
turn.
An overflow cycle of approximately (y + z +
bits are B'00. Verify data can be read in longwords from the address to which a dummy write
was performed.
before. The maximum number of repetitions of the erase/erase-verify sequence is N.
Erase/Erase-Verify
+
ms is allowed.
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