DF2367VF33V Renesas Electronics America, DF2367VF33V Datasheet - Page 228

• Manufacturer Part Number: DF2367VF33V
• Description: IC H8S/2367 MCU FLASH 128QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2367VF33V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 84
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• Ram Size: 24K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• For Use With: YR0K42378FC000BA - KIT EVAL FOR H8S/2378HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 6 Bus Controller (BSC)
6.6.5
Figure 6.20 shows the basic access timing for DRAM space.
The four states of the basic timing consist of one T
output cycle) state, and the T
When DRAM space is accessed, the RD signal is output as the OE signal for DRAM. When
connecting DRAM provided with an EDO page mode, the OE signal should be connected to the
(OE ) pin of the DRAM. Setting the OEE bit to 1 in DRAMCR enables the OE signal for DRAM
space to be output from a dedicated OE pin. In this case, the OE signal for DRAM space is output
Rev.6.00 Mar. 18, 2009 Page 168 of 980
REJ09B0050-0600
Read
Write
Note: n = 2, 3
Basic Timing
Figure 6.20 DRAM Basic Access Timing (RAST = 0, CAST = 0)
φ
Address bus
RASn (CSn)
UCAS, LCAS
WE (HWR)
OE (RD)
Data bus
WE (HWR)
OE (RD)
Data bus
c1
and two T
T
p
c2
Row address
(column address output cycle) states.
High
High
p
T
(precharge cycle) state, one T
r
T
c1
Column address
T
c2
r
(row address