DF2367VF33V Renesas Electronics America, DF2367VF33V Datasheet - Page 783

• Manufacturer Part Number: DF2367VF33V
• Description: IC H8S/2367 MCU FLASH 128QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2367VF33V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 84
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• Ram Size: 24K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• For Use With: YR0K42378FC000BA - KIT EVAL FOR H8S/2378HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

20.1.4
The user MAT is divided into 64 kbytes (seven blocks), 32 kbytes (one block), and 4 kbytes (eight
blocks) as shown in figure 20.4. The user MAT can be erased in this divided-block units and the
erase-block number of EB0 to EB15 is specified when erasing.
Block Division
Address H'07FFFF
Address H'000000
Address H'03FFFF
Address H'05FFFF
Figure 20.4 Block Division of User MAT
512 kbytes
384 kbytes
Section 20 Flash Memory (0.18-μm F-ZTAT Version)
256 kbytes
Rev.6.00 Mar. 18, 2009 Page 723 of 980
<User MAT>
4 kbytes
32 kbytes
64 kbytes
64 kbytes
64 kbytes
64 kbytes
64 kbytes
64 kbytes
64 kbytes
×
8
EB0
EB7
EB8
EB9
EB10
EB11
EB12
EB13
EB14
EB15
Erase block
to
REJ09B0050-0600