DF2367VF33V Renesas Electronics America, DF2367VF33V Datasheet - Page 789

IC H8S/2367 MCU FLASH 128QFP

DF2367VF33V

Manufacturer Part Number
DF2367VF33V
Description
IC H8S/2367 MCU FLASH 128QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of DF2367VF33V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
84
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
24K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
128-QFP
For Use With
YR0K42378FC000BA - KIT EVAL FOR H8S/2378HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2367VF33V
Manufacturer:
Renesas Electronics America
Quantity:
135
Part Number:
DF2367VF33V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Bit
4
3 to 1 ⎯
Bit Name
FLER
Initial
Value
0
All 0
R/W
R
R
Description
Flash Memory Error
Indicates an error occurs during programming and
erasing flash memory. When FLER is set to 1, flash
memory enters the error protection state. This bit is
initialized at transition to a power-on reset or hardware
standby mode.
When FLER is set to 1, high voltage is applied to the
internal flash memory. To reduce the damage to flash
memory, the reset must be released after the reset
period of 100 μs which is longer than normal.
0: Flash memory operates normally
1: Indicates an error occurs during programming/erasing
Reserved
These bits are always read as 0. The write value should
always be 0.
Programming/erasing protection for flash memory
(error protection) is invalid.
[Clearing condition] At a power-on reset or in hardware
standby mode
flash memory.
Programming/erasing protection for flash memory
(error protection) is valid.
[Setting conditions]
Section 20 Flash Memory (0.18-μm F-ZTAT Version)
When an interrupt, such as NMI, occurs during
programming/erasing flash memory.
When the flash memory is read during
programming/erasing flash memory
When the SLEEP instruction is executed during
programming/erasing flash memory
When a bus master other than the CPU, such as the
DMAC, DTC, or BREQ, gets bus mastership during
programming/erasing flash memory.
Rev.6.00 Mar. 18, 2009 Page 729 of 980
REJ09B0050-0600

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