DF2367VF33V Renesas Electronics America, DF2367VF33V Datasheet - Page 985

• Manufacturer Part Number: DF2367VF33V
• Description: IC H8S/2367 MCU FLASH 128QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2367VF33V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 84
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• Ram Size: 24K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• For Use With: YR0K42378FC000BA - KIT EVAL FOR H8S/2378HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Item
Erasing
Notes: 1. Follow the program/erase algorithms when making the time settings.
2. Programming time per 128 bytes. (Indicates the total time during which the P bit is set
3. Time to erase one block. (Indicates the time during which the E bit is set in FLMCR1.
4. Maximum programming time
5. The maximum number of writes (N) should be set as shown below according to the
6. For the maximum erase time (t
(Additional programming)
Number of writes (n)
in flash memory control register 1 (FLMCR1). Does not include the program-verify
time.)
Does not include the erase-verify time.)
actual set value of (z) so as not to exceed the maximum programming time (t
The wait time after P bit setting (z) should be changed as follows according to the
number of writes (n).
Number of writes (n)
wait time after E bit setting (z) and the maximum number of erases (N):
Wait time after
SWE bit setting *
Wait time after
ESU bit setting *
Wait time after
E bit setting *
Wait time after
E bit clearing *
Wait time after
ESU bit clearing *
Wait time after
EV bit setting *
Wait time after
H'FF dummy
write *
Wait time after
EV bit clearing *
Wait time after
SWE bit clearing *
Maximum number
of erases *
t
1 ≤ n ≤ 6
7 ≤ n ≤ 1000
1 ≤ n ≤ 6
t
E
P
(max) = Wait time after E bit setting (z) × maximum number of erases (N)
(max) = Σ wait time after P bit setting (z)
1
1
*
6
1
i=1
*
N
1
1
6
1
1
1
1
1
Symbol
x
y
z
α
β
γ
ε
η
θ
N
z = 30 µs
z = 200 µs
z = 10 µs
E
(max)), the following relationship applies between the
Min
1
100
—
10
10
20
2
4
100
—
Typ
—
—
—
—
—
—
—
—
—
—
Rev.6.00 Mar. 18, 2009 Page 925 of 980
Section 25 Electrical Characteristics
Max
—
—
10
—
—
—
—
—
—
100
Unit
μs
μs
ms
μs
μs
μs
μs
μs
μs
Times
REJ09B0050-0600
Test
Conditions
Erase time
wait
P
(max)).