DF2367VF33V Renesas Electronics America, DF2367VF33V Datasheet - Page 230

• Manufacturer Part Number: DF2367VF33V
• Description: IC H8S/2367 MCU FLASH 128QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2367VF33V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 84
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• Ram Size: 24K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• For Use With: YR0K42378FC000BA - KIT EVAL FOR H8S/2378HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 6 Bus Controller (BSC)
6.6.7
If the RAST bit is set to 1 in DRAMCR, the RAS signal goes low from the beginning of the T
state, and the row address hold time and DRAM read access time are changed relative to the fall of
the RAS signal. Use the optimum setting according to the DRAM connected and the operating
frequency of this LSI. Figure 6.22 shows an example of the timing when the RAS signal goes low
from the beginning of the T
Rev.6.00 Mar. 18, 2009 Page 170 of 980
REJ09B0050-0600
Figure 6.22 Example of Access Timing when RAS Signal Goes Low from Beginning
Read
Write
Note: n = 2, 3
Row Address Output State Control
φ
Address bus
RASn (CSn)
UCAS, LCAS
WE (HWR)
OE (RD)
Data bus
WE (HWR)
OE (RD)
Data bus
r
state.
of T
T
p
Row address
r
State (CAST = 0)
T
r
High
High
T
c1
Column address
T
c2
r