MC9S12XD256VAG Freescale Semiconductor, MC9S12XD256VAG Datasheet - Page 1060

• Manufacturer Part Number: MC9S12XD256VAG
• Description: IC MCU 256K FLASH 144-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS12r

Specifications of MC9S12XD256VAG

• Core Processor: HCS12X
• Core Size: 16-Bit
• Speed: 80MHz
• Connectivity: CAN, EBI/EMI, I²C, IrDA, LIN, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 119
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 4K x 8
• Ram Size: 14K x 8
• Voltage - Supply (vcc/vdd): 2.35 V ~ 5.5 V
• Data Converters: A/D 24x10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Chapter 25 2 Kbyte EEPROM Module (S12XEETX2KV1)
25.4.2.4
The mass erase operation will erase all addresses in an EEPROM block using an embedded algorithm.
An example flow to execute the mass erase operation is shown in
write sequence is as follows:
If the EEPROM memory to be erased contains any protected area, the PVIOL flag in the ESTAT register
will set and the mass erase command will not launch. Once the mass erase command has successfully
launched, the CCIF flag in the ESTAT register will set after the mass erase operation has completed unless
a new command write sequence has been buffered.
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1. Write to an EEPROM memory address to start the command write sequence for the mass erase
2. Write the mass erase command, 0x41, to the ECMD register.
3. Clear the CBEIF flag in the ESTAT register by writing a 1 to CBEIF to launch the mass erase
command. The address and data written will be ignored.
command.
Mass Erase Command
MC9S12XDP512 Data Sheet, Rev. 2.21
Figure
25-21. The mass erase command
Freescale Semiconductor