MC9S12XD256VAG Freescale Semiconductor, MC9S12XD256VAG Datasheet - Page 1099

• Manufacturer Part Number: MC9S12XD256VAG
• Description: IC MCU 256K FLASH 144-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS12r

Specifications of MC9S12XD256VAG

• Core Processor: HCS12X
• Core Size: 16-Bit
• Speed: 80MHz
• Connectivity: CAN, EBI/EMI, I²C, IrDA, LIN, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 119
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 4K x 8
• Ram Size: 14K x 8
• Voltage - Supply (vcc/vdd): 2.35 V ~ 5.5 V
• Data Converters: A/D 24x10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

26.4.2.6
The sector modify operation will erase both words in a sector of EEPROM memory followed by a
reprogram of the addressed word using an embedded algorithm.
An example flow to execute the sector modify operation is shown in
command write sequence is as follows:
If an EEPROM sector to be modified is in a protected area of the EEPROM memory, the PVIOL flag in
the ESTAT register will set and the sector modify command will not launch. Once the sector modify
command has successfully launched, the CCIF flag in the ESTAT register will set after the sector modify
operation has completed unless a new command write sequence has been buffered.
Freescale Semiconductor
1. Write to an EEPROM memory address to start the command write sequence for the sector modify
2. Write the sector modify command, 0x60, to the ECMD register.
3. Clear the CBEIF flag in the ESTAT register by writing a 1 to CBEIF to launch the sector erase
command. The EEPROM address written determines the sector to be erased and word to be
reprogrammed while byte address bit 0 is ignored.
command.
Sector Modify Command
MC9S12XDP512 Data Sheet, Rev. 2.21
Chapter 26 4 Kbyte EEPROM Module (S12XEETX4KV2)
Figure
26-23. The sector modify
1101