FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 102

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

www.fairchildsemi.com
Small Signal Transistors – Digital Transistors (Continued)
FJNS3213R
FJNS3214R
FJNS3215R
TO-92S PNP Configuration
FJNS3211R
FJNS4209R
FJNS4210R
FJNS4211R
FJNS4212R
FJNS4201R
FJNS4202R
FJNS4203R
FJNS4204R
FJNS4205R
FJNS4206R
FJNS4207R
FJNS4208R
FJNS4213R
FJNS4214R
Products
V
(V)
50
50
50
40
40
40
40
40
50
50
50
50
50
50
50
50
50
50
CEO
V
(V)
50
50
50
40
40
40
40
40
50
50
50
50
50
50
50
50
50
50
CBO
V
(V)
10
10
10
10
10
10
10
10
10
10
10
10
10
EBO
5
5
5
5
5
Max (A)
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
I
C
(KΩ)
2.2
4.7
2.2
4.7
4.7
4.7
2.2
4.7
R
22
10
22
47
10
22
47
10
22
47
1
(KΩ)
4.7
R
47
47
10
10
22
47
10
47
47
22
47
47
–
–
–
–
–
2
Min
100
100
100
100
100
68
68
33
20
30
56
68
30
68
68
56
68
68
2-97
Discrete Power Products –
Max
600
600
600
600
600
–
–
–
–
–
–
–
–
–
–
–
–
–
h
FE
@V
CE
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(V) @I
C
10
10
5
5
1
1
1
1
1
5
5
5
5
5
5
5
5
5
(mA)
Bipolar Transistors and JFETs
Max (V)
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
V
@I
CE (sat)
C
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
(mA) @I
B
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
10
1
1
1
1
(mA)