FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 78

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

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Load Switches
FDG901D
FDG6331L
FDG6323L
FDG6324L
FDC6901L
FDC6331L
SI3861DV
FDC6329L
FDC6325L
FDC6323L
FDC6332L
FDC6330L
FDC6326L
FDC6324L
FDR8521L
SC70 P-Channel
SC70-6 P-Channel
SSOT-6 P-Channel
SSOT-8 P-Channel
Products
V
IN
Max (V) V
20
20
20
20
20
6
8
8
6
8
8
8
8
8
8
GS
Max (V)
1.5
20
20
20
20
–
8
8
8
8
8
8
8
8
8
12V
0.36
2.5
1.5
2.9
–
–
–
–
–
–
–
–
–
–
1
I
L
(A) @ V
0.36
0.27
0.67
5V
2.8
2.8
1.5
1.6
1.8
DROP
–
–
–
–
1
–
1
2-73
= 0.2V
2.5V
0.27
0.67
0.7
2.5
1.9
–
–
–
–
1
–
–
–
–
–
0.125
12V
0.55
0.08
0.07
Bold = New Products (introduced January 2003 or later)
0.2
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
0.055
0.055
0.125
0.115
4.5V
0.26
0.55
0.75
0.07
0.13
0.35
0.2
0.2
0.3
–
–
R
DS(on)
Max(Ω) @ V
3.3V
0.3
–
–
–
–
–
–
–
–
–
–
–
–
–
–
IN
0.105
2.5V
0.33
0.75
0.07
0.07
0.18
=
0.5
–
–
–
–
–
–
–
–
Load Switches
1.8V
0.45
0.75
0.1
0.1
–
–
–
–
–
–
–
–
–
–
–