FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 195
![MOSFET N-CH 250V 3.6A I2PAK](/photos/26/99/269905/i2pak_sml.jpg)
FQI4N25TU
Manufacturer Part Number
FQI4N25TU
Description
MOSFET N-CH 250V 3.6A I2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQI3N25TU.pdf
(214 pages)
Specifications of FQI4N25TU
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.75 Ohm @ 1.8A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
3.6A
Gate Charge (qg) @ Vgs
5.6nC @ 10V
Input Capacitance (ciss) @ Vds
200pF @ 25V
Power - Max
3.13W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.75 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.6 A
Power Dissipation
3.13 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Lead Free Status / Rohs Status
Details
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www.fairchildsemi.com
Through-Hole
Note: Refer to individual product datasheet for specific product package dimensions
Bold = preferred package
Discrete
PDF links for all the packaging information is at: http://www.fairchildsemi.com/products/discrete/packaging/pkg.html
KBU
KBPM
Stretch-247
TO-205AF/TO-39
TO-3P/TO-247AD
TO-3P
TO-3PF
TO-92L
TO-92L
TO-92S
TO-92S
TO-92
Package Name
(Continued)
Prefixes Suffixes
(Continued)
MPSH
MPSA
MPSL
MPF
MPS
NDF
BCX
BSS
2N
TIS
BC
BF
BS
PF
PN
SS
U
P
J
MOSFET
X
X
X
X
X
X
X
Bipolar
X
X
X
X
X
X
X
X
X
X
Products
Diode
X
X
X
X
X
X
7-9
JFETs
X
X
X
IGBT
X
X
X
Pkg Method Qty (pcs)
Tape & Reel
Ammo
Ammo
Tube
Tube
Tube
Tube
Tube
Bulk
Bulk
Tray
Box
Packagig Standard
1.2K
1.5K
100
10K
30
30
30
2K
6K
2K
3K
2K
Packaging Information
Reel Dia
(inch)
n/a
n/a
n/a
n/a
n/a
n/a
n/a
14
14
14
Tape Width
(mm)
n/a
n/a
n/a
n/a
n/a
n/a
n/a
41
35
18
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