FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 148

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

www.fairchildsemi.com
Bridge Rectifiers (Continued)
KBU4J
KBU4K
KBU4M
KBU6A
KBU6B
KBU6D
KBU6G
KBU6J
KBU6K
KBU6M
KBU8A
KBU8B
KBU8D
KBU8G
KBU8J
KBU8K
KBU8M
SOIC
MB1S
MB2S
MB4S
MB6S
MB8S
WOB
2W005G
2W01G
2W02G
2W04G
2W06G
2W08G
2W10G
W005G
W01G
W02G
W04G
W06G
Products
V
RRM
1000
1000
1000
1000
600
800
100
200
400
600
800
100
200
400
600
800
100
200
400
600
800
100
200
400
600
800
100
200
400
600
50
50
50
50
(V)
I
F(AV)
0.5
0.5
0.5
0.5
0.5
1.5
1.5
1.5
1.5
1.5
2-143
4
4
4
6
6
6
6
6
6
6
8
8
8
8
8
8
8
2
2
2
2
2
2
2
(A)
Discrete Power Products –
V
FM
Max (V)
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Diodes and Rectifiers