FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 167
FQI4N25TU
Manufacturer Part Number
FQI4N25TU
Description
MOSFET N-CH 250V 3.6A I2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQI3N25TU.pdf
(214 pages)
Specifications of FQI4N25TU
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.75 Ohm @ 1.8A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
3.6A
Gate Charge (qg) @ Vgs
5.6nC @ 10V
Input Capacitance (ciss) @ Vds
200pF @ 25V
Power - Max
3.13W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.75 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.6 A
Power Dissipation
3.13 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Lead Free Status / Rohs Status
Details
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Zener Diodes (Continued)
1N6002B
1N759A
1N963B
BZX55C12
BZX79C12
1N5243B
1N6003B
1N964B
BZX55C13
BZX79C13
1N4701
1N5244B
1N5245B
1N6004B
1N965B
BZX55C15
BZX79C15
1N5246B
1N6005B
1N966B
BZX55C16
BZX79C16
1N5247B
1N5248B
1N6006B
1N967B
BZX55C18
BZX79C18
1N5249B
1N5250B
1N6007B
1N968B
BZX55C20
BZX79C20
1N5251B
Products
V
Z
Voltage (V)
Nominal Zener
13.3
12
12
12
12
12
13
13
13
13
13
14
15
15
15
15
15
16
16
16
16
16
17
18
18
18
18
18
19
20
20
20
20
20
22
Dissipation (W)
P
D
Total Device
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
2-162
Discrete Power Products –
Maximum Z
Bold = New Products (introduced January 2003 or later)
11.5
22
30
20
20
13
25
13
26
26
15
16
32
16
30
30
17
36
17
40
40
19
21
42
21
50
50
23
25
48
25
55
55
29
–
Z
(Ω)
Diodes and Rectifiers
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