FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 18

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

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SuperSOT™-8
FDR8305N
FDR6580
NDH831N
FDR6674A
FDR4420A
FDR6678A
NDH8321C
FDR8702H
NDH8521C
FDR8508P
NDH8502P
FDR858P
FDR856P
FDR8308P
NDH8304P
NDH8302P
FDR844P
FDR840P
FDR838P
FDR836P
NDH834P
NDH832P
FDR842P
SuperSOT-8 N-Channel
SuperSOT-8 Complementary N- and P-Channel
SuperSOT-8 P-Channel
Products
Min. (V)
20 | -20
20 | -20
30 | -30
BV
-30
-30
-30
-30
-20
-20
-20
-20
-20
-20
-20
-20
-20
-12
20
20
20
30
30
30
DSS
Complementary
Complementary
Complementary
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Dual
Dual
Dual
Dual
Dual
Dual
0.0085
0.009
0.019
10V
0.02
0.05
–
–
–
–
–
–
–
–
–
–
R
0.038 | 0.08
DS(ON)
0.0095
0.022
0.009
0.013
0.024
0.075
0.028
0.011
0.011
0.017
0.009
4.5V
0.05
0.07
0.06
Max (Ω) @ V
2-13
0.095@2.7V
0.054 | 0.11
0.08@2.7V
0.028
0.014
0.024
0.012
2.5V
0.011
0.016
0.07
–
–
–
–
–
GS
=
Replaced by NDH8304P
Replaced by FDC637AN
Replaced by FDS8928A
Replaced by FDS8958A
Replaced by FDN360P
Replaced by FDR858P
Replaced by FDR838P
Replaced by FDR838P
Bold = New Products (introduced January 2003 or later)
1.8V
0.016
0.02
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
16.2
7 | 6
34
33
23
13
21
13
16
53
41
30
18
57
8
= 5V
3.6 | 2.6
I
D
11.2
11.5
4.5
2.7
7.5
3.2
4.2
11
10
10
11
3
8
8
(A)
MOSFETs
P
D
0.8
1.8
0.8
0.8
1.8
1.8
1.8
1.8
1.8
1.8
0.8
1.8
0.8
1.8
1.8
(W)