FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 18
FQI4N25TU
Manufacturer Part Number
FQI4N25TU
Description
MOSFET N-CH 250V 3.6A I2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQI3N25TU.pdf
(214 pages)
Specifications of FQI4N25TU
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.75 Ohm @ 1.8A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
3.6A
Gate Charge (qg) @ Vgs
5.6nC @ 10V
Input Capacitance (ciss) @ Vds
200pF @ 25V
Power - Max
3.13W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.75 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.6 A
Power Dissipation
3.13 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Lead Free Status / Rohs Status
Details
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SuperSOT™-8
FDR8305N
FDR6580
NDH831N
FDR6674A
FDR4420A
FDR6678A
NDH8321C
FDR8702H
NDH8521C
FDR8508P
NDH8502P
FDR858P
FDR856P
FDR8308P
NDH8304P
NDH8302P
FDR844P
FDR840P
FDR838P
FDR836P
NDH834P
NDH832P
FDR842P
SuperSOT-8 N-Channel
SuperSOT-8 Complementary N- and P-Channel
SuperSOT-8 P-Channel
Products
Min. (V)
20 | -20
20 | -20
30 | -30
BV
-30
-30
-30
-30
-20
-20
-20
-20
-20
-20
-20
-20
-20
-12
20
20
20
30
30
30
DSS
Complementary
Complementary
Complementary
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Dual
Dual
Dual
Dual
Dual
Dual
0.0085
0.009
0.019
10V
0.02
0.05
–
–
–
–
–
–
–
–
–
–
R
0.038 | 0.08
DS(ON)
0.0095
0.022
0.009
0.013
0.024
0.075
0.028
0.011
0.011
0.017
0.009
4.5V
0.05
0.07
0.06
Max (Ω) @ V
2-13
0.095@2.7V
0.054 | 0.11
0.08@2.7V
0.028
0.014
0.024
0.012
2.5V
0.011
0.016
0.07
–
–
–
–
–
GS
=
Replaced by NDH8304P
Replaced by FDC637AN
Replaced by FDS8928A
Replaced by FDS8958A
Replaced by FDN360P
Replaced by FDR858P
Replaced by FDR838P
Replaced by FDR838P
Bold = New Products (introduced January 2003 or later)
1.8V
0.016
0.02
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
16.2
7 | 6
34
33
23
13
21
13
16
53
41
30
18
57
8
= 5V
3.6 | 2.6
I
D
11.2
11.5
4.5
2.7
7.5
3.2
4.2
11
10
10
11
3
8
8
(A)
MOSFETs
P
D
0.8
1.8
0.8
0.8
1.8
1.8
1.8
1.8
1.8
1.8
0.8
1.8
0.8
1.8
1.8
(W)
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