FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 16

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

www.fairchildsemi.com
SuperSOT-6/TSOP-6 (Continued)
FDC6306P
FDC6308P
FDC604P
FDC602P
FDC638P
FDC640P
FDC642P
FDC634P
FDC636P
FDC6318P
FDC606P
Products
Min. (V)
BV
-20
-20
-20
-20
-20
-20
-20
-20
-20
-12
-12
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Dual
Dual
Dual
10V
–
–
–
–
–
–
–
–
–
–
0.033
0.035
0.048
0.053
0.065
0.026
4.5V
R
0.17
0.08
0.13
0.09
DS(ON)
2-11
Max (Ω) @ V
0.043
0.065
0.125
0.035
2.5V
0.25
0.05
0.08
0.11
0.18
0.1
GS
Replaced by FDC6306P
=
Discrete Power Products –
0.053
1.8V
0.06
0.2
–
–
–
–
–
–
–
Q
@V
g
Typ. (nC)
GS
7.2
7.2
5.4
19
14
10
18
3
9
6
= 5V
I
D
1.9
5.5
5.5
4.5
4.5
3.5
2.8
2.5
4
6
(A)
MOSFETs
P
D
0.96
0.96
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
(W)