FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 120

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

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Small Signal Transistors – RF Amplifier Transistors
SOT-23 NPN Configuration
KST5179
MMBT5179
MMBT918
KSC2757
MMBT5770
KSC2223
KSC2756
KSC3123
KST10
MMBTH10
MMBTH11
KSC2755
KSC2715
MMBTH24
KST24
MMBTH10RG
MMBTH34
SOT-23 PNP Configuration
MMBTH81
TO-92 NPN Configuration
2N3663
KSP5179
MPS5179
PN5179
2N5770
PN3563
PN918
SS9018
KSC1730
BF494
KSC1674
KSC1187
KSP10
Products
V
CEO
12
12
15
15
15
20
20
20
25
25
25
30
30
30
30
40
40
20
12
12
12
12
15
15
15
15
15
20
20
20
25
(V)
V
CBO
20
20
30
30
30
30
30
30
30
30
30
30
35
40
40
40
40
20
30
20
20
20
30
30
30
30
30
30
30
30
30
(V) V
EBO
2
2
3
5
4
4
4
3
3
3
3
5
4
4
4
4
4
3
3
2
2
2
4
2
3
5
5
5
4
4
3
(V)
Max (A)
0.045
0.05
0.05
0.05
0.05
0.09
0.02
0.03
0.05
0.05
0.05
0.02
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.02
0.03
0.1
I
–
–
–
C
(MHz)
900
900
600
800
400
500
900
650
650
650
400
100
400
400
450
500
600
700
900
900
900
600
600
700
800
400
400
650
f
–
–
–
T
2-115
Discrete Power Products –
Min
25
25
20
60
50
40
60
60
60
60
60
60
70
30
30
50
40
60
20
25
25
25
50
20
20
28
40
65
40
40
60
Max
250
240
200
180
240
240
240
240
120
250
250
250
200
200
198
240
220
240
240
–
–
–
–
–
–
–
–
–
–
–
–
h
Bold = New Products (introduced January 2003 or later)
@V
FE
10
10
10
10
10
10
10
10
12
10
10
15
10
10
10
10
10
10
10
10
CE
1
1
1
6
6
1
1
1
1
5
6
(V) @I
C
3
3
3
5
8
1
5
5
4
4
4
3
2
8
8
1
7
5
8
3
3
3
8
8
3
1
5
1
1
2
4
(mA)
Bipolar Transistors and JFETs
Max (V)
0.4
0.4
0.4
0.5
0.4
0.3
0.5
0.5
0.5
0.5
0.4
0.2
0.5
0.4
0.4
0.4
0.4
0.4
0.5
0.5
0.3
0.5
–
–
–
–
–
–
–
–
–
V
@I
CE (sat)
C
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
–
–
–
–
–
–
–
–
–
4
4
4
5
4
(mA) @I
B
0.4
0.4
0.4
0.5
0.4
–
–
–
–
–
–
–
–
–
1
1
1
1
1
1
1
1
5
1
1
1
1
1
1
1
1
(mA)