FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 192

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

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Surface Mount
Note: Refer to individual product datasheet for specific product package dimensions
Bold = preferred package
Discrete
PDF links for all the packaging information is at: http://www.fairchildsemi.com/products/discrete/packaging/pkg.html
SOT-23 (TO-236AB)
SOT-23 (TO-236AB)
SOT-23
SOT-89
SOT-223
Package Name
(Continued)
Prefixes Suffixes
MMBTH
MMBTH
MMBFJ
MMBTA
MMBFJ
MMBTA
MMBF
MMBF
MMBT
MMBT
BCW
BCW
NDS
NDS
PZTA
BCV
BCX
BSR
BSS
FDV
BCV
BCX
BSR
BSS
FDV
KSC
KSA
KSR
KSK
BCP
BSP
NDT
KST
FDT
FZT
NZT
PZT
(Continued)
2N
2N
BA
BC
BA
BC
BC
MOSFET
X
X
X
Bipolar
X
X
X
X
X
Products
Diode
X
X
X
X
7-6
JFETs
X
X
X
IGBT
Pkg Method
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
(MTF)
Packaging Standard
Qty (pcs)
2.5K
10K
3K
3K
4K
Packaging Information
Reel Dia
(inch)
13
13
13
13
7
Tape Width
8 ± 0.3
(mm)
12
12
8
8