FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 207

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

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Discrete
Discrete IGBT (I)
F G A 25 N 120 A N
(Continued)
D
P: TO-220
PF: TO-220F
A: TO-3P
AF: TO-3PF
L: TO-264
Built-in FRD
Technology: N (NPT), NT (NPT + Trench)
Speed: A (100ns), B (200ns), C (500ns)
Voltage Rating (x10)
N: N-Channel
Current Rating
Package Type
IGBT
Fairchild
8-14
D: D-PAK
U: I-PAK
B: D
I: I
S: 8-SOP
2
-PAK
2
-PAK
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