FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 141

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

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BAT54C
BAT54S
FYV0203DN
FYV0203DP
FYV0203DS
FYV0203S
FYV0704S
FYP1004DN
FYP1010DN
FYP1045DN
FYP1504DN
FYP1545DN
FYP2004DN
FYP2006DN
FYP2010DN
FYP2045DN
MBRP1545N
MBRP2045N
MBRP3010N
MBRP3045N
MBRP745
SuperSOT-3/SOT-23
TO-220
Products
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Diode
Schottky Diode
Schottky Diode
Schottky Diode
Schottky Diode
Schottky Diode
Schottky Diode
Function
Configuration
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual Series
Dual Series
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Anode
Anode
Single
Single
Single
I
100
100
100
150
200
150
150
150
150
250
200
150
(A)
FSM
0.6
0.6
0.6
0.6
0.6
0.6
0.6
80
80
8
2-136
(°C/W)
R
430
430
430
430
430
430
430
250
θJA
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
V
100
100
100
RRM
(V)
30
30
30
30
30
30
30
40
40
45
40
45
40
60
45
45
45
45
45
Bold = New Products (introduced January 2003 or later)
I
F (AV)
0.75
0.3
0.3
0.3
0.2
0.2
0.2
0.2
7.5
(A)
10
10
10
15
15
20
20
20
20
15
20
30
30
V
Diodes and Rectifiers
FM
0.48
0.55
0.75
0.55
0.55
0.55
0.55
0.58
0.77
0.55
1.05
0.65
(V)
0.8
0.8
0.8
1
1
1
1
1
1
1
Max
(µA) @V
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
100
100
2
2
2
2
2
2
2
I
RM
Max
100
100
100
25
25
25
30
30
30
30
40
40
45
40
45
40
60
45
45
45
45
45
R
(V)